Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 degreesC, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 degreesC, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the short-wavelength quantum-dot laser previously reported. (C) 2001 American Institute of Physics.

基于组块及记忆的词性自动标注

基于组块及记忆的模型(BMM)采用与传统方法明显不同的标注思路,以汉语中的整句为处理单元,从组块出发,立足于单个词汇,分析更为丰富的上下文语境知识,并借助知网词典记忆词性集合,同时采用渐增式的机械学习方式获取参数值。对于棘手的稀疏数据问题只简单地设置平伏常数加以平滑,最后利用少量人工规则修正标注结果。实验表明,该模型的封闭式测试准确率将近99%,开放式测试准确率为95%以上。

黄土丘陵区不同恢复年限草地土壤微团粒分形特征

运用分形理论研究黄土丘陵区不同恢复年限草地土壤微团粒的粒径组成、分形维数特征及与土壤理化性质关系,使分形学在土壤微团粒性状与土壤肥力特征研究中得到进一步应用,并为评价草地生态系统土壤特征及生态恢复提供新方法。结果表明:表土层分形维数随植被恢复年限的增加而减少;剖面土壤沙粒含量越高,微团粒分形维数越低,粘粒规律相反,而粉粒与分形维数相关性不显著;土壤质地由粗到细使得分形维数由小到大变化;分形维数也可有效地表征不同植被恢复年限的草地土壤结构和养分的变化趋势;分形维数与土壤容重、非活性孔度、全磷、速效钾及氨态氮之间存在正相关性,与土壤活性孔度、孔隙比、有机质、全氮、碱解氮及硝态氮表现出负相关。

负载茂金属催化剂的过程开发

本工作合成了一系列新型壳核载体负载茂金属催化剂，并利用其进行了过程开发的研究；结合对气相法和淤浆法两种聚合方法的比较进行了聚合物形态的研究；最后对得到的乙烯／α－烯烃的共聚物进行了表征。主要工作如下：1）发明了一种新型的有机／无机壳核结构复合载体，以PSAm负载于SiO_2, MgCl_2等制得。探讨了不同制备条件下所得载体的化学结构与组成以及载体的形态和物理性质。SEM和图像分析表明：载体有良好的球形度以及粒径分布均匀；IR和XPS证明了聚合物在载体中的存在以及A型载体中PSAm与SiO_2以氢键相连；TGA给出了聚合物在载体中的含量。2）研究了茂金属负载催化剂的不同制备条件并对催化剂进行了表征。通过XPS对催化剂表面Zr元素结合能的分析，发现壳核载体的表面化学环境与聚合物载体类似。BET对催化剂的研究结果表明：催化剂表面积和孔度较大，有利于烯烃的聚合。表面元素分析证明聚合物上的官能团在载体表面分布均匀。最后对催化剂进行了初步的聚合实验，研究了Al/Zr比和温度对催化剂活性的影响。3）进行了催化剂的过程开发。利用实验室的微型反应器对五种催化剂进行了筛选，确定MSC－3为首选催化剂。并采用淤浆法在2L高压釜上进行了优选催化剂的小试，分析了压力和溶剂对催化剂聚合活性的影响。最后在φ100mm直径气相流化订聚合反应器上对优选催化剂进行了模式实验。实验得到了堆密度较高（0.39g/cm~3），颗粒分布均匀，粒径较大（平均560μm）的聚乙烯产物，证明了此种催化剂的工业化前景光明。并对气相法聚合所需Al/Zr比较小，α－烯烃促活效应等进行了解释。4）对茂金属催化剂所得原生态聚合物的形态问题进行了研究。发现对于均相茂金属催化体系，由其所得聚乙烯的形态是一种分形结构，符合CCA模型。而对于负载茂金属催化剂，本文通过实验对其聚合过程进行了研究，提出了一种新型的聚合模型（载体破碎多核模型）。利用该模型，并通过淤浆法和气相法两种聚合方法的比较，发现聚合体系的传热和传质效应对聚合物的形态控制有着决定性的作用。并集中探讨了催化剂的物理性质、负载的牢固程度、溶剂和聚合方法等因素对聚合物形态的影响。5）对气相法聚合所得的乙烯／α－烯烃共聚物进行了表征。从~(13)C NMR和DSC的结果发现：负载茂金属催化剂可能存在多活性中心。在共聚物分子量研究中发现不同组成聚合物特性粘数的变化异常，表明可能有长链支化存在。

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As 的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh 振荡(FKO)信号.随着Mn原子浓度的增加,PR 线形展宽,但是临界点E_0和E_0+Δ_0没有明显的移动.根据FKO 振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强.测量到与Mn 原子掺杂相关的杂质带,其能量位置离GaAs价带边～100 meV.根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为～10~(17) cm~(-3),较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域.

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

High temperature annealing behaviors of luminescent SIOx : H films

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

辽河干流底质微生物群落结构及芘降解菌研究

辽宁省是以石油化工、煤炭化工和钢铁工业为主的重工业基地。辽河流域近年来经济发展迅速，城市化水平不断提高，但由于产业结构的不合理和污染治理水平的相对滞后，致使辽河流域水体污染严重。对辽河流域水体污染状况、污染物化学与生物学的相互作用、微生物群落结构与功能的关系开展调查研究，对开展污染水体的生物生态修复具有重要的指导意义。 本论文选取辽河流域干流8个水文监测站点的不同时期（丰水期和平水期）底质为研究对象，调查了有机污染物（总油TPHs）和有毒污染物（多环芳烃PAHs）污染程度以及主要来源；采用变性梯度凝胶电泳（DGGE）和磷脂脂肪酸（PLFA）两种分析方法，对其微生物群落结构及多样性进行了分析；并以13C标记的菲和芘为代谢底物，以PLFA为生物标记物，采用气相色谱-稳定同位素比率质谱（GC-c-IRMS）分析技术，鉴定了底质样品中参与菲和芘代谢的主要微生物类群；并利用不同的吸附性载体进行了芘降解菌的富集和筛选。 研究结果表明： 1）平水期总石油烃污染比丰水期严重，TPH 含量分别在276.1～560.6mg/kg（平水期）和157.9～462.2mg/kg（丰水期）之间，辽河入海口TPH污染最重；PAHs含量分别在124.1～270.4ug/kg（平水期）和93.5～209.1ug/kg（丰水期）之间；主要来源于石油类污染物和化石燃料的热解，汽车尾气的污染等。 2) 采用DGGE和PLFA两种方法分析微生物群落结构得到基本一致的结果。微生物多样性与总石油烃含量、总多环芳烃含量无显著相关性，多样性指数是多种污染物和环境因子综合影响的结果。 3) 稳定同位素代谢示踪实验表明，底质中存在菲和芘的降解菌群；参与菲和芘降解的微生物均以G-细菌为主，真菌次之；G+细菌和放线菌也参与代谢；参与菲和芘代谢的菌群有一定的相似性。 4) 利用不同吸附性载体从污染底质样品中筛选到6株降解菌。