Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate

The influences of the cavity on the low-temperature photoluminescence of Si0.59Ge0.41/Si multiquantum wells grown on silicon-on-insulator substrates are discussed. The positions of the modulated photoluminescence (PL) peaks not only relate to the nature of SiGe/Si multiquantum wells, but also relate to the characteristic of the cavity. With increasing temperature, a redshift of the modulated PL peak originating from the thermo-optical effect of the cavity is observed.

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.

Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H_2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.

Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

于2010-11-23批量导入

Si（113）表面原子结构的低能电子衍射研究

于2010-11-23批量导入

HST/STIS observations of the high-velocity interstellar cloud HVC 291.2-41.2+80: a warm, mainly ionized high-velocity cloud

We present intermediate-resolution HST/STIS spectra of a high- velocity interstellar cloud ((LSR)-L-upsilon = + 80 kms(-1)) towards DI1388, a young star in the Magellanic Bridge located between the Small and Large Magellanic Clouds. The STIS data have a signal-to-noise ratio (S/N) of 20-45 and a spectral resolution of about 6.5 km s(-1) (FWHM), The high-velocity cloud absorption is observed in the lines of C II, O I, Si II, Si III, Si IV and S III. Limits can be placed on the amount of S II and Fe II absorption that is present. An analysis of the relative abundances derived from the observed species, particularly C II and O I, suggests that this high-velocity gas is warm (T-k similar to 10(3)-10(4) K) and predominantly ionized, This hypothesis is supported by the presence of absorption produced by highly ionized species, such as Si IV, This sightline also intercepts two other high-velocity clouds that produce weak absorption features at (LSR)-L-upsilon = + 113 and + 130kms(-1) in the STIS spectra.