ALGAAS GAAS TJS LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD

Autoria(s): HU XW; SAKAI S; SOGA T; UMENO M
Data(s)

1988
Identificador

http://ir.semi.ac.cn/handle/172111/14609

http://www.irgrid.ac.cn/handle/1471x/101339
Idioma(s)

英语
Fonte

HU XW; SAKAI S; SOGA T; UMENO M.ALGAAS GAAS TJS LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD,JOURNAL OF LUMINESCENCE ,1988,40-41(0):814-815
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital