Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.