Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Influence of the deposition energy on the composition and thermal cycling behavior of La-2(Zr0.7Ce0.3)(2)O-7 coatings

Lanthanum-zirconium-cerium composite oxide (La-2(Zr0.7Ce0.3)(2)O-7, LZ7C3) coatings were prepared under different conditions by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies, cyclic oxidation behavior of these coatings were studied. Elemental analysis indicates that the coating composition has partially deviated from the stoichiometry of the ingot, and the existence of excess La2O3 is also observed.

Effects of deposition conditions on composition and thermal cycling life of lanthanum zirconate coatings

Lanthanum, zirconate (La2Zr2O7, LZ) coatings were prepared under four different deposition conditions by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphology, cyclic oxidation behavior of these coatings were studied. Elemental analysis indicates that the coating composition has partially deviated from the stoichiometry of pyrochlore, and the existence of excess La2O3 is also observed. The deviation could be reduced by properly controlling the electron beam current or by changing the ingot composition.

Synthesis of ordered mesoporous carbons composed of nanotubes via catalytic chemical vapor deposition

Ordered mesoporous carbons composed of arrays of nanotubes have been synthesized using ordered mesoporous silica templates via catalytic chemical vapor deposition. The ordered carbons possess bimodal pores, namely, the pores arise from the "replica" of frameworks of the template and the pores correspond to carbon nanotubes formed in the channels of the template (see Figure).

A novel approach to Co/CNTs catalyst via chemical vapor deposition of organometallic compounds

A novel approach for attaching well-dispersed cobalt nanoparticles homogeneously onto carbon nanotubes via metal organic chemical vapor deposition technique is reported. The obtained Co/CNTs catalysts feature a narrow size distribution of Co particles centering around 7.5 nm, and show high activity and regioselectivity for hydroformylation of 1-octene.

Anatase thin films on glass from the chemical vapor deposition of titanium(IV) chloride and ethyl acetate

Thin (50-500 nm) films of TiO2 may be deposited on glass substrates by the atmospheric pressure chemical vapor deposition (APCVD) reaction of TiCl4 with ethyl acetate at 400600 C. The TiO2 films are exclusively in the form of anatase, as established by Raman microscopy and glancing angle X-ray diffraction. X-ray photoelectron spectroscopy gave a 1:2 Ti:O ratio with Ti 2P(3/2) at 458.6 eV and O 1s is at 530.6 eV. The water droplet contact angle drops from 60degrees to

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

We have demonstrated a self-aligned process to fabricate organized iron nanowires on a planarized surface with wire dimensions down to 50 nm. Polishing was used to expose an alternating silicon silicon dioxide edge and a dual selective metal deposition process produced the nanowires. The initial selective deposition produced a tungsten layer on the exposed polysilicon regions. The discovery that selective chemical vapor deposition of iron from Fe(CO)(5) precursor on dielectric surfaces over tungsten surfaces is the key factor that enables the self-alignment of the iron nanowires. Dimensions of the wires are determined by the thickness of the thermal oxide. (c) 2007 The Electrochemical Society.