A Photovoltaic InAs Quantum-Dot Infrared Photodetector

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.

分组密码工作模式的研究现状

分组密码工作模式是利用分组密码解决实际问题的密码方案．好的工作模式可以弥补分组密码的某些缺憾；相反，不好的工作模式可能带来安全隐患．工作模式的研究始终伴随着分组密码的研究历史，新的分组密码标准的推出，都会伴随着相应工作模式的研究．从针对DES的ECB、CBC、CFB和OFB，到针对AES的CTR、CCM、CMAC、GCM和AESKW，作者以各种模式标准为主线，介绍分组密码工作模式的设计理念、安全模型、二十多年的研究成果以及发展现状．

光导纤维pH传感器的光化学pH敏感高分子膜及pH响应性能

pH指示剂在高分子载体上的固定化研究是应光导纤维pH传感器的发展要求而发展起来的新的研究领域。pH指示剂在高分子固态载体上的固定直接决定着光导纤维pH传感器的灵敏度、响应时间、寿命等性能。迄今，吸附、包埋和化学键合三利，固定方法已得到广泛应用。吸附法与包埋法简单易行，但因指示剂易于逸出而无法保证试剂相的使用稳定性及寿命；化学键合法目前仅限于对含氨基等高反应活性基团的指示剂固定。另外，这三种固定技术均存在试剂相与分析对象呈现固／液两相分离的问题，它严重制约了传感器响应性能，成为pH指示剂固定技术发展的“瓶颈”。改善、发展与寻找新的指示剂／载体固定配对体系已成为本领域的研究焦点。本论文针对上述问题，开拓与发展了一系列指示剂固定于固态高分子载体上的新体系。（一）首先开拓与发展了酚红／交联聚乙烯醇与邻甲酚红／交联聚乙烯醇固定对的新体系。在酸性条件下，以甲醛做交联剂，通过在玻璃板上倾涂聚乙烯醇甲醛的凝胶溶液制备了高亲水性的交联聚乙烯醇载体膜；然后采用接枝共聚反应将丙烯酞胺单体与通过酸碱反应接枝有酚红或邻甲酚红的丙烯酞胺混合物接枝固定到交联聚乙烯醇薄膜上，首次将不含氨基的酚红、邻甲酚红在高亲水性的聚乙烯醇载体上固定。利用紫外可见光光谱仪测试了其响应性能。结果表明，固定化指示剂的光谱行为与其相应的水溶液的光谱行为不一致，这可能是固定化过程中新的化学键生成以及载体与指示剂之间的相互作用如氢键的作用等引起的。这也导致了其pH响应范围与相应指示剂水溶液的响应范围的差异。固定酚红交联聚乙烯醇pH敏感膜的pH响应范围为pH=6.72～8.49；固定邻甲酚红交联聚乙烯醇pH敏感膜的两个响应范围分别为［H~+］=0.1mol／L～5mol／L和pH7.97～12.26。这种方式制备的这两种pH敏感薄膜均表现出优异的可重复使用性、可逆性、稳定性及易于制备的特点。更突出的优点在于，与以聚丙烯酰胺为基质直接固定酚红的薄膜（PAM-PR）相比，这种固定技术制备的敏感膜，当其与分析剂溶液接触时，其接枝于表面的水溶性高分子溶解，呈现“液态”，在固态基质表面形成一“液膜”层，从而消除了试剂相与分析剂之间的相界面，克服了指示剂固定化技术中的“瓶颈”问题，大幅度地提高了其响应速度与灵敏度，使响应时间从PAM-PR的数十分钟降至30秒以下。（二）开拓了刚果红醋酸纤维素包埋对的pH敏感膜（CCM）及刚果红／环氧氯丙烷交联聚乙烯醇（PECM）和甲醛交联聚乙烯醇（PFCM）的三种pH敏感膜新体系，测试并比较了三种膜的响应性能。结果表明，固定化刚果红的光谱性质和响应范围与刚果红水溶液不一致，而且用不同载体固定的刚果红的光谱特征与响应范围也各不相同。CCM的响应范围为pH＝2.5～4.5，PECM的响应范围在［H~+］=2mol/L～pH＝6.8之间，PFCM响应范围为pH＝2.90～5.48。这也可能是固定化过程中的氢键效应、空间位阻、指示剂与载体间发生的化学反应不同及载体本身结构的差异等引起的。这三种膜也具有良好的重现性、可逆性及响应迅速（平均响应时间低于25秒）的特点。另外发现醋酸纤维素包埋刚果红的敏感膜具有特殊的稳定性。对这种特殊的稳定性原因的分析表明选择合适尺寸分子的指示剂与载体配对将可能克服包埋技术中指示剂逸出的缺点。（三）对制备的pH敏感膜及对应的水溶液的pH线性响应范围给出了相应的线性回归方程（R＞98.2）。结果表明这些敏感膜对响应范围内的pH均具有良好的线性响应关系。这些结果与思想不仅丰富了光导pH传感器的试剂相内容，也为后续工作提供了一些有益的借鉴。

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.

EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION

Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed.

IDENTIFICATION OF THE ENERGY-LEVELS OF SI-RH

Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.

PHYSICAL BEHAVIOR OF RUTHENIUM IN SILICON

We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-X-alpha (SW-X-alpha) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.

Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Capacitance-voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1-xTex epilayers in the range of Te composition being studied in this work. (C) 1997 American Institute of Physics. [S0021-8979(97)08421-1].

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

In AlGaAs/InGaAs/GaAs PM-HEMT structures, the characterization of deep centers, the degradation in electrical and optical properties and their effects on electrical performance of the PM-HEMTs have been investigated by DLTS, SIMS, PL and conventional van der Pauw techniques. The experimental results confirm that the deep level centers correlate strongly with the oxygen content in the AlGaAs layer, the PL response of PM-HEMTs, and the electrical performance of the PM-HEMTs. Hydrogen plasma treatment was used to passivate/annihilate these centers, and the effects of hydrogenation were examined.

Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD

The deep centers in AlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique, The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (Hi and E3), having large capture cross sections and concentrations, are observed in the graded n-AlxGa1-xAs layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the n-AlxGa1-xAs layer with x = 0.20-0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in the n-AlxGa1-xAs layer with x = 0.18-0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the AlxGa1-xAs layer with x = 0.22-0.30.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.