Structure and magnetic properties of CoNiP nanowire arrays embedded in AAO template

Ternary CoNiP nanowire (NW) arrays have been synthesized by electrochemical deposition inside the nanochannels of anodic aluminum oxide (AAO) template. The CoNiP NWs deposited at room temperature present soft magnetic properties, with both parallel and perpendicular coercivities less than 500 Oe. In contrast, as the electrolyte temperature (T-elc) increases from 323 to 343 K, the NWs exhibit hard magnetic properties with coercivities in the range of 1000-2500 Oe. This dramatic increase in coercivities can be attributed to the domain wall pinning that is related to the formation of Ni and Co nanocrystallites and the increase of P content. The parallel coercivity (i.e. the applied field perpendicular to the membrane surface) maximum as high as 2500 Oe with squareness ratio up to 0.8 is achieved at the electrolyte temperature of 328 K. It has been demonstrated that the parallel coercivity of CoNiP NWs can be tuned in a wide range of 200-2500 Oe by controlling the electrolyte temperature, providing an easy way to control magnetic properties and thereby for their integration with magnetic-micro-electromechanical systems (MEMS). (C) 2008 Elsevier B.V. All rights reserved.

Population structure and variance effective size of red snapper (Lutjanus campechanus) in the northern Gulf of Mexico*

We assayed allelic variation at 19 nuclear-encoded microsatellites among 1622 Gulf red snapper (Lutjanus campechanus) sampled from the 1995 and 1997 cohorts at each of three offshore localities in the northern Gulf of Mexico (Gulf). Localities represented western, central, and eastern subregions within the northern Gulf. Number of alleles per microsatellite per sample ranged from four to 23, and gene diversity ranged from 0.170 to 0.917. Tests of conformity to Hardy-Weinberg equilibrium expectations and of genotypic equilibrium between pairs of micro-satellites were generally nonsignificant following Bonferroni correction. Significant genic or genotypic heterogeneity (or both) among samples was detected at four microsatellites and over all microsatellites. Levels of divergence among samples were low (FST ≤0.001). Pairwise exact tests revealed that six of seven “significant” comparisons involved temporal rather than spatial heterogeneity. Contemporaneous or variance effective size (NeV) was estimated from the temporal variance in allele frequencies by using a maximum-likelihood method. Estimates of NeV ranged between 1098 and >75,000 and differed significantly among localities; the NeV estimate for the sample from the northcentral Gulf was >60 times as large as the estimates for the other two localities. The differences in variance effective size could ref lect differences in number of individuals successfully reproducing, differences in patterns and intensity of immigration, or both, and are consistent with the hypothesis, supported by life-history data, that different “demographic stocks” of red snapper are found in the northern Gulf. Estimates of NeV for red snapper in the northern Gulf were at least three orders of magnitude lower than current estimates of census size (N). The ratio of effective to census size (Ne/N) is far below that expected in an ideal population and may reflect high variance in individual reproductive success, high temporal and spatial variance in productivity among subregions or a combination of the two.

Uma Análise da Utilização da Lei do Bem nas Micro e Pequenas Empresas (MPE)de Base Tecnológica Incubadas no Vale da Eletrônica, em Santa Rita do Sapucaí (MG)

A presente pesquisa objetiva analisar a utilização da Lei n 11.195/05, a Lei do Bem, por micro e pequenas empresas de base tecnológica - EBTs incubadas localizadas no polo tecnológico de Santa Rita do Sapucaí (MG), considerando para isto a interação da hélice tríplice, ou seja, a interação entre universidade-empresa-governo. Com intuito específico, objetiva identificar os principais motivos para a utilização da Lei do Bem, assim como dos motivos determinantes para a utilização ou não dos benefícios fiscais por ela proporcionados. A referida Lei proporciona benefícios fiscais voltados para a inovação e desenvolvimento de tecnologia, incluindo vantagens para a contratação de pesquisadores e na aquisição de equipamentos e maquinário para essas finalidades, entre outros. A pesquisa foi realizada pelo intermédio de uma estudo de campo na cidade de Santa Rita do Sapucaí (MG), que possibilitou a coleta dos dados mediante entrevistas estruturadas de maneira semiaberta com os empresários e órgão e instituições de apoio da região, possibilitando assim uma maior liberdade aos entrevistados para responderem dentro do roteiro estabelecido. O roteiro abrangia, de forma resumida, perguntas referentes à inovação, estrutura da região e do conhecimento e utilização da Lei do Bem. A análise dos dados coletados nas entrevistas constatou que o Arranjo Produtivo Local (APL) em que as empresas se encontram possui estrutura para a inovação e o desenvolvimento de tecnologia, entretanto, a interação entre os atores da hélice tríplice apresentou restrições em relação à utilização de financiamentos, fomentos e da utilização dos benefícios fiscais, em específico na dificuldade da utilização da Lei do Bem pelas empresas da região. Constatou-se nas as empresas pesquisadas, dificuldade para utilização de fomentos específicos para a inovação. Os fatores determinantes da dificuldade do uso da Lei do Bem apontados pela pesquisa foram o desconhecimento da Lei pelos empresários, falta de informação sobre a Lei e, o regime tributário escolhido. Esse estudo pode contribuir para aumentar o alcance da Lei do Bem às Micro e Pequenas Empresas (MPEs), e pela análise da citada Lei ao longo dos seus oito anos de vigência, sendo sete deles já reportados pelo Ministério da Ciência, Tecnologia e Inovação (MCTI), que resultou em uma lista com 1456 empresas que já se utilizaram dos benefícios proporcionados pela Lei do Bem de 2006 a 2012.

Centrifuge tests investigating inclined grout micro-piles as a method of liquefaction remediation for existing buildings

This paper presents a series of centrifuge tests carried out to investigate the performance of non-structural inclined micro-piles as a potential liquefaction remediation method for existing buildings. Both a single-degree-of-freedom frame structure and a two-storey, two-degree-of-freedom frame structure were used as model buildings in these tests. Centrifuge tests were carried out with and without micro-piles in the foundation soil for each structure. Results primarily from the tests with the SDOF structure are presented in this paper. It is found that the micro-piles have some beneficial effect by increasing shear strains in the soil in their vicinity and hence causing dilation in these zones. However, they also increase structural accelerations by transmitting accelerations from deep in the soil and the beneficial effects from increased dilation are outweighed by the detrimental migration of pore pressures.

Centrifuge modelling of inclined micro-piles for liquefaction remediation of existing buildings

This paper describes four centrifuge tests investigating the performance of non-structural inclined micro-piles as a liquefaction remediation method for existing buildings. Two soil profiles with the same superstructure founded on each were tested under earthquakes of different magnitudes and durations. The first profile consisted of a deep, homogeneous layer of loose, liquefiable sand. The second comprised a shallow layer of loose sand overlying dense sand. Centrifuge tests were carried out with and without inclined micro-piles in each soil profile. The superstructure was modelled as an idealised single degree of freedom (SDOF) system. It is found that the micro-piles have no detrimental effect on the performance of the structure during and after earthquakes. It is also possible that their presence may decrease structural settlements in earthquakes which cause liquefaction to a depth less than that of the improved zone. However, no conclusive evidence is obtained to show that the micro-piles significantly restrain lateral soil movement due to monotonic shearing from the structure or impede the migration of excess pore pressures from the free field to the foundation zone. Both these processes have critical effects on structural settlement. The use of inclined micro-piles for liquefaction remediation should therefore be considered with caution.

Turbulent flow structure in experimental laboratory wind-generated gravity waves

This paper is the third part of a report on systematic measurements and analyses of wind-generated water waves in a laboratory environment. The results of the measurements of the turbulent flow on the water side are presented here, the details of which include the turbulence structure, the correlation functions, and the length and velocity scales. It shows that the mean turbulent velocity profiles are logarithmic, and the flows are hydraulically rough. The friction velocity in the water boundary layer is an order of magnitude smaller than that in the wind boundary layer. The level of turbulence is enhanced immediately beneath the water surface due to micro-breaking, which reflects that the Reynolds shear stress is of the order u *w 2. The vertical velocities of the turbulence are related to the relevant velocity scale at the still-water level. The autocorrelation function in the vertical direction shows features of typical anisotropic turbulence comprising a large range of wavelengths. The ratio between the microscale and macroscale can be expressed as λ/Λ=a Re Λ n, with the exponent n slightly different from -1/2, which is the value when turbulence production and dissipation are in balance. On the basis of the wavelength and turbulent velocity, the free-surface flows in the present experiments fall into the wavy free-surface flow regime. The integral turbulent scale on the water side alone underestimates the degree of disturbance at the free surface. © 2012 Elsevier B.V.

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum

We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Micro-Raman study on hydrogenated protocrystalline silicon films

Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio.

Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.