Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator


Autoria(s): Geng, MM; Jia, LX; Zhang, L; Yang, L; Liu, YL; Li, F
Data(s)

2008

Resumo

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

zhangdi于2010-03-09批量导入

Made available in DSpace on 2010-03-09T02:11:51Z (GMT). No. of bitstreams: 1 648.pdf: 622166 bytes, checksum: 91c6e63d18c027efa528fe5f2590384b (MD5) Previous issue date: 2008

IEEE.

[Geng, Minming; Jia, Lianxi; Zhang, Lei; Yang, Lin; Liu, Yuliang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China

IEEE.

Identificador

http://ir.semi.ac.cn/handle/172111/7752

http://www.irgrid.ac.cn/handle/1471x/65643

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Geng, MM ; Jia, LX ; Zhang, L ; Yang, L ; Liu, YL ; Li, F .Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator .见:IEEE .2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-3: 624-626

Palavras-Chave #半导体材料 #WAVE-GUIDES #DEVICES #DESIGN
Tipo

会议论文