Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108
| Data(s) |
2008
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| Resumo |
The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED. The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T02:11:55Z (GMT). No. of bitstreams: 1 688.pdf: 553530 bytes, checksum: 4612fe4eff7f5d79bb91f0f76193a165 (MD5) Previous issue date: 2008 SPIE.; Chinese Opt Soc. [Fan, Jingmei; Wang, Liangchen; Guo, Jinxia; Yi, Xiaoyan; Liu, Zhiqiang; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Fan, JM ; Wang, LC ; Guo, JX ; Yi, XY ; Liu, ZQ ; Wang, GH ; Li, JM .Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108 .见：SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: 84108-84108 |
| Palavras-Chave | #光电子学 #GaN-based LED #Micro-LEDs #light extraction efficiency #ray tracing #flip-chip |
| Tipo |
会议论文 |
