Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07T12:16:42Z No. of bitstreams: 1 Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk.pdf: 1433935 bytes, checksum: e78b401380b4ef7786d4f99e833eb050 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07T13:08:56Z (GMT) No. of bitstreams: 1 Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk.pdf: 1433935 bytes, checksum: e78b401380b4ef7786d4f99e833eb050 (MD5)

Made available in DSpace on 2010-09-07T13:08:56Z (GMT). No. of bitstreams: 1 Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk.pdf: 1433935 bytes, checksum: e78b401380b4ef7786d4f99e833eb050 (MD5) Previous issue date: 2010

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