A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy

Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. The cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. The bandgap of SiGe quantum well in implanted and annealed samples is blue-shifted by up to 97 meV, relative to that in annealed-only samples. (C) 2000 Elsevier Science S.A. All rights reserved.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Si-based membrane resonant cavity enhanced photodetectors

Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement.

1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

A high-efficiency high-power evanescently coupled UTC-photodiode

The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Intelligent control of avalanched photodiode to get optimal state

To improve the sensitivity of our laser radar system, we provided a set of control method for APDs (Avalanched Photodiodes) based on single-chip computer together with the circuits dealing with noise and temperature. It adjusts the voltages intelligently and maintains the APD's optimal working status.

The time and energy signals, counter plateau, energy resolution and gas gains performances of a new kind of micro-pattern gaseous detector-Micromegas

In present paper, a new Micromegas detector is developed, and its time and energy signals are obtained in the figure form. The rising time of fast time signal is less than 2 ns due to the very fast collection of avalanche electrons, and the rising time of the energy pulse is about 100 ns, which is corresponding to the total collecting time of the electrons and ions in the avalanche process. The counter plateau, energy resolution and the gas gains of the detector have been compared with other groups' experimental results and the Garfield simulation result.

Temperature effects of CsI(Tl) crystal detector with APD readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.

八单元一维位置灵敏雪崩室

In the experiment of nuclear reaction, it is important to measure the mass, charge, energy and emitted direction of particles. For multiparameter measurement, we must use a detector or a group of detectors which can give the time, energy, and position information. The Large Area position sensitive Ionization Chamber(LAIC) is one of the eight experiment terminals of HIRFL. It is built for researching nuclear reactions from low energy to intermediate energy. It is an excellent equipment for energy measurements and atomic number identification of emitted fragments in this energy region. It is also designed to give the time and position information of the emitted fragments by itself. Obviously, an IC can not supply a good timing signal. Moreover, the mechanical installation is different from the original design by some other reasons. In this case, it is not enough to obtain the correct direction information of the emitted fragments. To obtain good timing signals and the correct direction information, some modifications must be made. It is well known that a PPAC can give us excellent timing signals. It also can be easily built as a position sensitive detector. For this reason, a specially designed PPAC is installed in the entrance of the LAIC. For the different purposes, two types of PPACs were designed and tested. Both are OCTPSACs (OCTunit one dimension Position Sensitive Avalanche Counter). In this paper, both OCTPSACs will be introduced. Based on the requirements of the LAIC, the OCTPSACs consist of eight position sensitive PPACs. Each PPAC has an anode and a cathode. In both cases, the sizes are same. But different type of cathodes are used. In one type of OCTPSAC, its cathode is made of wire plane. It consists of gold-plated tungsten wires with the diameter of 20μm, spaced 0.5 mm apart from each other. The anode is a mylar foil which was evaporated by gold layer with the thickness of 50μg/cm~2 mounted on a printed plate in the shape of rectangle. the thickness of mylar foil is 1.5μm. The gap between anode and cathode is 3mm. The performance of the OCTPSAC has been tested by using a ~(252)Cf source in flowing isobutylene gas at the pressure of 3.4mb. The intrinsic time resolution of 289ps and position resolution of 2 mm have been obtained. In another type of OCTPSAC, the cathode is made of mylar foil, which is composed of gold strip by vacuume evaporation method with a special mask on the mylar foil. The thickness and the width of the gold strip is 50μg/cm~2 and 1.7mm. The strips are spaced 0.3 mm apart from each other. The anode is the same as the former type. We have obtained the time resolution of 296ps and position resolution of 2mm by using ~(241)Am-a source when the gas pressure is 6 mb and high voltage is 600V. The working gas is heptane