A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy
| Data(s) |
2000
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| Resumo |
Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. The cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. The bandgap of SiGe quantum well in implanted and annealed samples is blue-shifted by up to 97 meV, relative to that in annealed-only samples. (C) 2000 Elsevier Science S.A. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li C; Yang QQ; Chen YH; Wang HJ; Wang JZ; Yu JZ; Wang QM .A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy ,THIN SOLID FILMS,2000,359(2):236-238 |
| Palavras-Chave | #半导体材料 #quantum well intermixing #photocurrent spectroscopy #photoelectronic devices #SiGe/Si MQW #blue shift energy #ION-IMPLANTATION |
| Tipo |
期刊论文 |
