Spray drying: An alternative synthesis method for polycationic oxide compounds

Synthesis of polycationic compounds by the spray-drying technique is an interesting alternative in the domain of aqueous precursor synthesis methods. Spray drying yields high quality samples with good reproducibility. The possibility of scaling up for production of large quantities with fast processing time is well established by the commercial availability of powders of various compositions. In this paper, we have discussed the advantages and limitations of this method and demonstrated its interest by synthesizing a few polycationic compounds selected for their attractive properties of thermoelectricity [Bi1.68Ca2Co1.69O 8, La0.95A0.05CoO3 (A=Ca, Sr, Ba)] or magnetoresistance [La0.70A0.30MnO3 (A=Sr, Ba)]. We have confirmed the quality of these samples by reporting their structure, magnetic and transport properties. © 2010 Elsevier Ltd All rights reserved.

Magnetotransport of La0.5Ba0.5MnO3

Physical properties of polycrystalline La0.5Ba 0.5MnO3 are reported from low temperature (10 K) up to above room temperature. An aim has been to obtain microscopic parameters and to search for the characteristic lengths in terms of which one can discuss the interplay between magnetic, electric, and phonon excitations. The structural and magnetotransport measurements reveal a set of relatively high transition temperatures (near 300 K) between ferromagnetic/metallic and paramagnetic/semiconducting phases. It is found, in particular, that the so-called localization length increases from 0.085 to 0.24 nm when the magnetic field varies from 0 to 8 T. Moreover a "special field value" ∼0.03 T is observed in the description of the electrical resistance. It cannot be presently distinguished whether it is the signature of a spin reorientation transition in the canted phase or a mere saturation field for aligning magnetic domains. The relatively high magnetoresistance effect (≃55% at 8 T and 10 K) makes the La0.5Ba0.5MnO3 a very interesting material for among others sensor applications. © 2009 American Institute of Physics.

Electrical transport and magnetic properties of Mn3O4-La0.7Ca0.3MnO3 ceramic composites prepared by a one-step spray-drying technique

La0.7Ca0.3MnO3/Mn3O4 composites can be synthesized in one step by thermal treatment of a spray-dried precursor, instead of mixing pre-synthesized powders. Another advantage of this composite system is that a long sintering step can be used without leading to significant modification of the manganite composition. The percolation threshold is reached at ∼20 vol% of manganite phase. The 77 K low field magnetoresistance is enhanced to ∼11% at 0.15 T when the composition is close to the percolation threshold. © 2007 Elsevier Ltd. All rights reserved.

Spin-cluster effect and lattice-deformation-induced Kondo effect, spin-glass freezing, and strong phonon scattering in La 0.7 Ca 0.3Mn 1-xCr xO 3

Besides the Kondo effect observed in dilute magnetic alloys, the Cr-doped perovskite manganate compounds La0.7 Ca0.3 Mn1-x Crx O3 also exhibit Kondo effect and spin-glass freezing in a certain composition range. An extensive investigation for the La0.7 Ca0.3 Mn1-x Crx O3 (x=0.01, 0.05, 0.10, 0.3, 0.6, and 1.0) system on the magnetization and ac susceptibility, the resistivity and magnetoresistance, as well as the thermal conductivity is done at low temperature. The spin-glass behavior has been confirmed for these compounds with x=0.05, 0.1, and 0.3. For temperatures above Tf (the spin-glass freezing temperature) a Curie-Weiss law is obeyed. The paramagnetic Curie temperature θ is dependent on Cr doping. Below Tf there exists a Kondo minimum in the resistivity. Colossal magnetoresistance has been observed in this system with Cr concentration up to x=0.6. We suppose that the substitution of Mn with Cr dilutes Mn ions and changes the long-range ferromagnetic order of La0.7 Ca0.3 MnO3. These behaviors demonstrate that short-range ferromagnetic correlation and fluctuation exist among Mn spins far above Tf. Furthermore, these interactions are a precursor of the cooperative freezing at Tf. The "double bumps" feature in the resistivity-temperature curve is observed in compounds with x=0.05 and 0.1. The phonon scattering is enhanced at low temperatures, where the second peak of double bumps comes out. The results indicate that the spin-cluster effect and lattice deformation induce Kondo effect, spin-glass freezing, and strong phonon scattering in mixed perovskite La0.7 Ca0.3 Mn1-x Crx O3. © 2005 American Institute of Physics.

Spin glass behaviour and spin-dependent scattering in la 0.7Ca 0.3Mn 0.9Cr 0.1O 3 perovskites

The magnetic, electrical and thermal transport properties of the perovskite La 0.7Ca 0.3Mn 0.9Cr 0.1O 3 have been investigated by measuring dc magnetization, ac susceptibility, the magnetoresistance and thermal conductivity in the temperature range of 5-300K. The spin glass behaviour with a spin freezing temperature of 70 K has been well confirmed for this compound, which demonstrates the coexistence and competition between ferromagnetic and antiferromagnetic clusters by the introduction of Cr. Colossal magnetoresistance has been observed over the temperature range investigated. The introduction of Cr causes the "double-bump" feature in electrical resistivity ρ(T). Anomalies on the susceptibility and the thermal conductivity associated with the double-bumps in ρ(T) are observed simultaneously. The imaginary part of ac susceptibility shows a sharp peak at the temperature of insulating-metallic transition where the first resistivity bump was observed, but it is a deep-set valley near the temperature where the second bump in ρ(T) emerges. The thermal conductivity shows an increase below the temperature of the insulating-metallic transition, but the phonon scattering is enhanced accompanying the appearance of the second peak of double-bumps in ρ(T). We relate those observed in magnetic and transport properties of La 0.7Ca 0.3Mn 0.9Cr 0.1O 3 to the spin-dependent scattering. The results reveal that the spin-phonon interaction may be of more significance than the electron (charge)-phonon interaction in the mixed perovskite system. © 2005 Chinese Physical Society and IOP Publishing Ltd.

A simple ac bridge for detecting small resistance change

A simple ac resistance bridge is proposed. The stability of the design is better than 10(-6), which is especially suitable for detecting tiny changes of resistance. An example of magnetoresistance measurement for a 220 nm Au film shows the good performance of the bridge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3202284]

Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis

Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak anti localization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08 meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions. (C) 2009 The Japan Society of Applied Physics

Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magneto resistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations oil analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign. (C) 2009 Elsevier B.V. All rights reserved.

Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.

Interplay between s-d exchange interaction and Rashba effect: Spin-polarized transport

The authors investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to perpendicular magnetic and electric fields. Interesting beating patterns in the magnetoresistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)]. (c) 2006 American Institute of Physics.

Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Interlayer segregation in magnetic multilayers and its influence on exchange coupling

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. X-ray photoelectron spectroscopy shows that Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. While studying Ta/X(X=Bi,Pb,Ag,In)/NiFe/FeMn multilayers, we also find that X atoms segregate to the NiFe/FeMn interface, which results in a decrease of the H-ex. However, a small amount of Bi, Pb, etc. deposited between Cu and pinned NiFe layer for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers can increase H-ex. (C) 2003 American Institute of Physics.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Effects of annealing on properties of spin-valve pinned with FeMn alloy

The magnetic properties of spin-valve pinned by FeMn layer were investigated after it was annealed at different temperatures. Its property was dependent on the vacuum annealing temperature. The pinning field could be increased through annealing at a temporature lower than 200degreesC;the pinning field would reduce and other properties be deteriorated as the annealing temperature was higher than 200degreesC; the pinning effect lost and giantmagnetic resistance disappeared at 300degreesC. Based on the results of AES analysis it was concluded that the diffusion in spin-valve multilayer was along grain boundary.