Interplay between s-d exchange interaction and Rashba effect: Spin-polarized transport


Autoria(s): Yang W (Yang W.); Chang K (Chang Kai); Wu XG (Wu X. G.); Zheng HZ (Zheng H. Z.); Peeters FM (Peeters F. M.)
Data(s)

2006

Resumo

The authors investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to perpendicular magnetic and electric fields. Interesting beating patterns in the magnetoresistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)]. (c) 2006 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/10386

http://www.irgrid.ac.cn/handle/1471x/64387

Idioma(s)

英语

Fonte

Yang W (Yang W.); Chang K (Chang Kai); Wu XG (Wu X. G.); Zheng HZ (Zheng H. Z.); Peeters FM (Peeters F. M.) .Interplay between s-d exchange interaction and Rashba effect: Spin-polarized transport ,APPLIED PHYSICS LETTERS,2006 ,89(13):Art.No.132112

Palavras-Chave #半导体物理 #INJECTION #HETEROSTRUCTURE #SEMICONDUCTORS #TEMPERATURE
Tipo

期刊论文