Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis

Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak anti localization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08 meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions. (C) 2009 The Japan Society of Applied Physics

National Basic Research Program of China 2007CB924900 National Natural Science Foundation of China 60221502 60606025National Science Foundation for Post-doctoral Scientists of China 20070420634 Scientific Research Foundation of Guangxi University X071109 Shanghai Committee of Science and Technology, China 07JC14059 Knowledge Innovation Program of the Chinese Academy of Sciences C2-12 C2-31 The authors would like to acknowledge the financial support from the National Basic Research Program of China (Grant No. 2007CB924900), the National Natural Science Foundation of China (Grant Nos. 60221502 and 60606025), the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20070420634), the Scientific Research Foundation of Guangxi University (Grant No. X071109), the Shanghai Committee of Science and Technology, China (Grant No. 07JC14059), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. C2-12 and C2-31).