Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy

For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.

The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.

INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY

The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1-2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043]

ATOMIC PHYSICS RESEARCHES AT COOLER STORAGE RING IN LANZHOU

The commissioning of the cooler storage rings (CSR) was successful, and the facility provides new possibilities for atomic physics with highly charged ions. Bare carbon, argon ions, were successfully stored in the main ring CSRm, cooled by cold electron beam, and accelerated up to 1 GeV/u. Heavier ions as Xe44+ and Kr28+ were also successfully stored in the CSRs. Both of the rings are equipped with new generation of electron coolers which can provide different electron beam density distributions. Electron-ion interactions, high precision X-ray spectroscopy, complete kinematical measurements for relativistic ion-atom collisions will be performed at CSRs. Laser cooling of heavy ions are planned as well. The physics programs and the present status will be summarized.

Atomic force microscopy and surface-enhanced Raman scattering detection of DNA based on DNA-nanoparticle complexes

We report a simple method for the label-free detection of double-stranded DNA using surface-enhanced Raman scattering (SERS). We prepared cetyltrimethylammonium bromide (CTAB)-capped silver nanoparticles and a DNA-nanoparticle complex by adding silver nanoparticles to lambda-DNA solutions. In the present study, the utilization of CTAB-capped silver nanoparticles facilitates the electrostatic interaction between DNA molecules and silver nanoparticles; at the same time, the introduction of DNA avoids adding aggregating agent for the formation of nanoparticle aggregates to obtain large enhancement of DNA, because the DNA acts as both the probe molecules and aggregating agent of Ag nanoparticles.

Full View of Single-Molecule Force Spectroscopy of Polyaniline in Oxidized, Reduced, and Doped States

The macroscopic mechanical properties of polyaniline (PANI) lie mainly on two factors, the structure of molecular aggregations of polymers and the mechanical properties of a single polymer chain. The former factor is swell revealed; however, the latter is rarely studied. In this article, we have employed atomic force microscopy-based single-molecule force spectroscopy to investigate the mechanical properties of a kind of water-soluble PANI at a single-molecular level. We have carried out the study comparatively on single-chain-stretching experiments of oxidized, reduced, and doped PANI and obtained a full view of the single-chain elasticity of PANI in all these states. It is found that oxidized and reduced PANI chains are rigid, and the oxidized PANI is more rigid than the reduced PANI. Such a difference in single-chain elasticity can be rationalized by the molecular structures that are composed of benzenoid diamine and quinoid diimine its different proportions. The doped PANI has been found to be more flexible than the oxidized and reduced PANI, and the modified freely jointed chain parameters of doped PANI are similar with those of a common flexible-chain polymer.

Measuring the electronic decay constant of alkanedithiols by electrochemical impedance spectroscopy

Several methods have been used for the measurement of the electronic decay constant (beta) of organic molecules. However, each of them has some disadvantages. For the first time, electrochemical impedance spectroscopy (EIS) was used to obtain the 18 value by measuring the tunneling resistance through alkanedithiols. The tunneling resistance through alkanedithiols increases exponentially with the molecular length in terms of the mechanism of coherent nonresonant tunneling. beta was 0.51 +/- 0.01 per carbon.

Surface phase separations of PMMA/SAN blends investigated by atomic force microscopy

The thin films of poly(methyl methacrylate) (PMMA), poly(styrene-co-acrylonitrile) (SAN) and their blends were prepared by means of spin-coating their corresponding solutions onto silicon wafers, followed by being annealed at different temperatures. The surface phase separations of PMMA/SAN blends were characterized by virtue of atomic force microscopy (AFM). By comparing the tapping mode AFM (TM-AFM) phase images of the pure components and their blends, surface phase separation mechanisms of the blends could be identified as the nucleation and growth mechanism or the spinodal decomposition mechanism. Therefore, the phase diagram of the PMMA/SAN system could be obtained by means of TM-AFM. Contact mode AFM was also used to study the surface morphologies of all the samples and the phase separations of the blends occurred by the spinodal decomposition mechanism could be ascertained. Moreover, X-ray photoelectron spectroscopy was used to characterize the chemical compositions on the surfaces of the samples and the miscibility principle of the PMMA/SAN system was discussed.

Measurement of the single-color three-photon resonant ionization spectrum of atomic uranium under the "equivalent wavelength effect laser" interaction

Using Nd: YAG laser (532 nm) pumped mixed-dye laser. we obtained the output of this dye enhanced at the wavelength interval equivalent to that given by the copper vapor laser pumped dye laser. This measure favored is with the measurement of single-color three-photon resonant ionization spectrum of atomic uranium in the range of 562-586 nm,which is otherwise not efficiently covered by Nd: YAG laser pumped dye laser with any single dye. Thus 140 U I energy levels were obtained and the peaks of interest 575.814 nm and 575.836 rim were well resolved and their relative intensity determined.

Study on polymer micelles of hydrophobically modified ethyl hydroxyethyl cellulose using single-molecule force spectroscopy

Individual hydrophobically modified ethyl hydroxyethyl cellulose (HM-EHEC) molecules under different conditions were elongated using a new atomic force microscope (AFM) based technique-single-molecule force spectroscopy (SMFS). The critical concentration of HM-EHEC for micelle-like clusters at a solid/liquid interface was around 0.8 wt %, which is lower than that in solution. The different mechanical properties of HM-EHEC below and above the critical concentration were displayed on force-extension curves. Through a comparison with unmodified hydroxyethyl cellulose, substituent-induced effects on nanomechanical features of HM-EHEC were investigated. Because of hydrophobic interactions and cooperative binding with the polymer, surfactants such as sodium dodecyl sulfate (SDS) dramatically influence the elastic properties of HM-EHEC below the critical concentration, and further addition of SDS reduces the interactions between the hydrophobic groups and the surfactant.

Characteristics in frequency domain by inductively coupled plasma atomic emission spectrometry with charge injection detection

The charactesistics of two-dimension spectra obtained by inductively coupled plasma atomic emission spectrometry (ICP-AES) with charge injection detection (CID) in frequency domain were studied in the present paper. The measurement spectra were Fourier transformed and the frequency distribution of the spectra was obtained. Results showed that the spectra in frequency domain could he divided into two parts:high frequency and low frequency signals. The later stood for measurement spectra and the former for background and noises. However, the high frequecny signals could not be smoothed simply to reduce noises because the background was deteriorated even though the spectral signal did not change significantly.

Determination of rare-earth impurities in ultra-highly pure Er2O3 and Ho2O3 by [HEH(HEP)] extraction chromatography-atomic emission spectrometry

This article applied [HEH(HEP)] (2-ethyhexyldrogen-2-ethylhexyl phosphonate)extraction chromatography to separate 14 rare earth impurities from ultra-highly pure Er2O3 and Ho2O3, and then the impurities were determined by atomic emission spectrometry. The average percentage recovery for each element is in the range of 70%similar to 140%. The relative standard deviations of the determination are +/-3.3%similar to 2.2%. This method can be applied to the determination of the trace amounts of rare eath impurities in Er2O3 and Ho2O3 with a purity of 99.999 9%-99.999 99%.