The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy
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2000
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Resumo |
The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL .The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2000,19(3):191-193 |
Palavras-Chave | #光电子学 #atomic hydrogen-assisted molecular beam epitaxy #deep level transient spectroscopy #deep level defects #DISLOCATION DENSITY #IRRADIATION |
Tipo |
期刊论文 |