Nanotechnology: What is it and how will it affect us?

A non-technical review of nanotechnology from a Catalan perspective – its potential economic and social impacts and the potential role of public policy.

Millora de la resposta electro-mecànica per a ressonadors d'alta freqüència basats en MEMS

Report for the scientific sojourn at the Department of Micro and Nanotechnology of the Technical University of Denmark from August until December 2006. The research was focused on designing and carrying out a technological process for fabricating high frequency resonators with dielectric solid transducer gaps.

Implementació de cursos d'Electrònica i Tècniques de Microscòpia en modalitat docent semipresencial amb estratègies de treball cooperatiu i avaluació continuada en entorn de programari lliure Moodle

L’objectiu principal del present projecte MQD és la implementació de cursos semipresencials en el campus virtual MOODLE per a la docència de les assignatures d’Electrònica troncals de l’ensenyament de Física que depenen del nostre departament i de l’assignatura Tècniques de Microscòpia, que és optativa i comuna als Màsters de Nanociència i Nanotecnologia i d’Enginyeria Física. Plantegem metodologies docents basades en: (1) reduir la presencialitat, (2) afavorir l'autoaprenentatge, (3) aplicar estratègies d’avaluació formativa i avaluació acreditativa continuada i (4) fer ús de les TIC com a suport a la docència. La versatilitat de la plataforma Moodle per compartir recursos permetrà generar un material docent accessible per altres professors. D’altra banda, la possibilitat de Moodle per a la gestió de grups, organització i revisió de tasques facilitarà el seguiment de l’activitat d’autoaprenentatge i de treball cooperatiu així com de l’avaluació final dels aprenentatges. Durant la duració d'aquest projecte MQD s'han implementat els segúents entorns: - Curs d'Electrònica Física, semipresencial, amb treball cooperatiu i amb implantació d'avaluació continuada - Entorn de Coordinació del Master de Nanociència i Nanotecnologia - Curs de l'assignatura optativa de Màster Oficial de Nanociència i Nanotecnologia "Tècniques de Microscòpia"

Nanotecnologies en mecànica molecular i cel·lular

Algunes nanotècniques recents permeten la manipulació de biomolècules i cèl·lules en escala nanomètrica amb la mesura simultània de la força aplicada amb resolució de piconewtons. Aquestes escales de desplaçament i força, i la possibilitat de treballar en medi líquid, fan que siguin eines molt útils per a l'estudi de les propietats mecàniques de molècules i cèl·lules individuals en condicions fisiològiques. Entre les tècniques més utilitzades es troben el microscopi de força atòmica, les trampes de làser i les microesferes magnètiques. En aquest treball es descriuen els principis de funcionament d'aquestes tècniques en aplicacions biològiques i, en particular, en l'estudi de la mecànica molecular i cel·lular.

Nanoscale capacitance microscopy of thin dielectric films

We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin dielectric films. The model displays a logarithmic dependence on the tip-sample distance and on the film thickness-dielectric constant ratio and shows an excellent agreement with finite-element numerical simulations and experimental results on a broad range of values. Based on these results, we discuss the capabilities of nanoscale capacitance microscopy for the quantitative extraction of the dielectric constant and the thickness of thin dielectric films at the nanoscale.

Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon

Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.

Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperature

This work is focused on the study of the fine speckle contrast present in planar view observations of matched and mismatched InGaAs layers grown by molecular beam epitaxy on InP substrates. Our results provide experimental evidence of the evolution of this fine structure with the mismatch, layer thickness, and growth temperature. The correlation of the influence of all these parameters on the appearance of the contrast modulation points to the development of the fine structure during the growth. Moreover, as growth proceeds, this structure shows a dynamic behavior which depends on the intrinsic layer substrate stress.

Size-dependent recombination dynamics in ZnO nanowires.

A deep understanding of the recombination dynamics of ZnO nanowires NWs is a natural step for a precise design of on-demand nanostructures based on this material system. In this work we investigate the influence of finite-size on the recombination dynamics of the neutral bound exciton around 3.365 eV for ZnO NWs with different diameters. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process. Furthermore, we have observed two broad transitions around 3.341 and 3.314 eV, which were identified as surface states by studying the dependence of their life time and intensitiy with the NWs dimensions.

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

Growth of unstable interfaces in disordered media

The effects of a disordered medium in the growth of unstable interfaces are studied by means of two local models with multiplicative and additive quenched disorder, respectively. For short times and large pushing the multiplicative quenched disorder is equivalent to a time-dependent noise. In this regime, the linear dispersion relation contains a destabilizing contribution introduced by the noise. For long times, the interface always gets pinned. We model the systematics of the pinned shapes by means of an effective nonlinear model. These results show good agreement with numerical simulations. For the additive noise we find numerically that a depinning transition occurs.

Interface dynamics in Hele-Shaw flows with centrifugal forces. Preventing cusp singularities with rotation

A class of exact solutions of Hele-Shaw flows without surface tension in a rotating cell is reported. We show that the interplay between injection and rotation modifies the scenario of formation of finite-time cusp singularities. For a subclass of solutions, we show that, for any given initial condition, there exists a critical rotation rate above which cusp formation is suppressed. We also find an exact sufficient condition to avoid cusps simultaneously for all initial conditions within the above subclass.

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

The formation of coherently strained three-dimensional (3D) islands on top of the wetting layer in the Stranski-Krastanov mode of growth is considered in a model in 1 + 1 dimensions accounting for the anharmonicity and nonconvexity of the real interatomic forces. It is shown that coherent 3D islands can be expected to form in compressed rather than expanded overlayers beyond a critical lattice misfit. In expanded overlayers the classical Stranski-Krastanov growth is expected to occur because the misfit dislocations can become energetically favored at smaller island sizes. The thermodynamic reason for coherent 3D islanding is incomplete wetting owing to the weaker adhesion of the edge atoms. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. This explains the experimentally observed narrow size distribution of the 3D islands. The 2D-3D transformation takes place by consecutive rearrangements of mono- to bilayer, bi- to trilayer islands, etc., after the corresponding critical sizes have been exceeded. The rearrangements are initiated by nucleation events, each one needing to overcome a lower energetic barrier than the one before. The model is in good qualitative agreement with available experimental observations.

Vortex state and effect of anisotropy in sub-100 nm magnetic nanodots

Magnetic properties of Fe nanodots are simulated using a scaling technique and Monte Carlo method, in good agreement with experimental results. For the 20-nm-thick dots with diameters larger than 60¿nm, the magnetization reversal via vortex state is observed. The role of magnetic interaction between dots in arrays in the reversal process is studied as a function of nanometric center-to-center distance. When this distance is more than twice the dot diameter, the interaction can be neglected and the magnetic properties of the entire array are determined by the magnetic configuration of the individual dots. The effect of crystalline anisotropy on the vortex state is investigated. For arrays of noninteracting dots, the anisotropy strongly affects the vortex nucleation field and coercivity, and only slightly affects the vortex annihilation field