Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
02/05/2012
|
| Resumo |
Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics, 1994 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Camps magnètics #Nanotecnologia #Magnetic fields #Nanotechnology |
| Tipo |
info:eu-repo/semantics/article |
