Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Data(s) |
02/05/2012
|
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics, 1993 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Cristal·lografia #Nanotecnologia #Crystallography #Nanotechnology |
| Tipo |
info:eu-repo/semantics/article |
