Caracterització d'oscil·ladors basats en CMOS-M/NEMS i la seva aplicació com a sensors de massa

El present projecte tracta sobre la caracterització d'oscil·ladors basats en ressonadors micro/nanoelectromecànics (M/NEMS) i la seva aplicació com a sensors de massa. Els oscil·ladors utilitzats es basen en un pont i una palanca ressoants M/NEMS, integrats en tecnologia CMOS. En primer lloc s'ha fet una introducció teòrica als conceptes utilitzats per a entendre el funcionament i la caracterització dels dispositius. A continuació s'han realitzat proves per tal de caracteritzar els paràmetres importants per a l'ús dels oscil·ladors com a sensors de massa, com la seva estabilitat en freqüència. Per acabar s'han aplicat aquests sensors en la caracterització i modelització del flux de massa a través d'obertures de dimensions micromètriques.

A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

A bidimensional array based on single-photon avalanche diodes for triggered imaging systems is presented. The diodes are operated in the gated mode of acquisition to reduce the probability to detect noise counts interfering with photon arrival events. In addition, low reverse bias overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process gets rid of afterpulses and offers a reduced dark count probability by applying the proposed modes of operation. The detector exhibits a dynamic range of 15 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 1.0V.

Avoiding sensor blindness in Geiger mode avalanche photodiode arrays fabricated in a conventional CMOS process

The need to move forward in the knowledge of the subatomic world has stimulated the development of new particle colliders. However, the objectives of the next generation of colliders sets unprecedented challenges to the detector performance. The purpose of this contribution is to present a bidimensional array based on avalanche photodiodes operated in the Geiger mode to track high energy particles in future linear colliders. The bidimensional array can function in a gated mode to reduce the probability to detect noise counts interfering with real events. Low reverse overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process presents an increased efficiency and avoids sensor blindness by applying the proposed techniques.

Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20µm x 100µm (width x length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behaviour. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 0.5V. The three pixels have been fabricated in a standard HV-CMOS process.

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.

Readout electronics for low dark count pixel detectors based on geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliders

The high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase of the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 µm and a high integration 0.13 µm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.

Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies

Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35µm technology is also presented in this article.

Disseny i caracterització d'estructures RF amb printed electronics per a RFID

En els últims anys printed electronics està aixecant un gran interès entre la indústria electrònica. Aquest tipus de procés consisteix en imprimir circuits amb tècniques d'impressió convencionals utilitzant tintes conductores, resistives, dielèctriques o semiconductores sobre substrats flexibles de baix cost com paper o plàstic. Fer servir aquestes tècniques s'espera que suposi una reducció dels costos de producció degut a que és un procés totalment additiu el que fa que sigui més senzill i es redueixi la quantitat de material emprat. El disseny de dispositius bàsics com resistències, condensadors i bobines per posteriorment veure la relació entre simulacions i valors obtinguts ha ocupat la primera part del projecte. La segona s’ha centrat en fer prototips d’antenes per a RFID (Radio Frequency IDentification) amb la tecnologia que es disposa a CEPHIS (Centre de Prototips i Solucions Hardwre-Software). Tot això ha servit per caracteritzar la tecnologia de la que es disposa i saber en quins apartats s’ha de seguir treballant per aconseguir millors prestacions.

Estudio de parámetros circuitales de resonadores

El objetivo de este proyecto consiste en el estudio de los parámetros circuitales (condensadores, bobinas…) de un resonador, realizado con estructuras microstrip, donde permita obtener unos resultados de esos parámetros circuitales cambiando los valores físicos del diseño, tales como la longitud y la anchura del resonador a partir de las medidas de los parámetros S. Para llevar a cabo dicho trabajo, se desarrolla en primer lugar toda la teoría necesaria de resonadores. Empezando por el funcionamiento y la estructura del resonador diseñado, y mostrando especial interés en el modelado de dicho resonador. Seguidamente, se estudia y analiza su comportamiento a través de las simulaciones de los parámetros S. Una vez se ha estudiado y analizado su comportamiento, se procede con las modificaciones de los parámetros físicos y se analiza a través de las simulaciones de los parámetros S cómo afectan estas modificaciones en los parámetros circuitales. Donde se utilizan una serie de herramientas que agilizan la extracción de los valores de los parámetros circuitales del resonador.

Desarrollo de tecnología Bulk Acoustic Wave

El creciente uso de dispositivos móviles y el gran avance en la mejora de las aplicaciones y sistemas inalámbricos ha impulsado la demanda de filtros paso banda miniaturizados, que trabajen a altas frecuencias y tengan unas prestaciones elevadas. Los filtros basados en resonadores Bulk Acoustic Wave (BAW) están siendo la mejor alternativa a los filtros Surface Acoustic Wave (SAW), ya que funcionan a frecuencias superiores, pueden trabajar a mayores niveles de potencia y son compatibles con la tecnología CMOS. El filtro en escalera, que utiliza resonadores BAW, es de momento la mejor opción, debido a su facilidad de diseño y su bajo coste de fabricación. Aunque el filtro con resonadores acoplados (CRF) presenta mejores prestaciones como mayor ancho de banda, menor tamaño y conversión de modos. El problema de este tipo de filtros reside en su complejidad de diseño y su elevado coste. Este trabajo lleva a cabo el diseño de un CRF a partir de unas especificaciones bastante estrictas, demostrando sus altas prestaciones a pesar de su mayor inconveniente: el coste de fabricación.

Non-invasive RF built-in testing using on-chip temperature sensors

This poster shows how to efficiently observe high-frequency figures of merit in RF circuits by measuring DC temperature with CMOS-compatible built-in sensors.

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate.

Low noise pixel detectors based on gated geiger mode avalanche photodiodes

The gated operation is proposed as an effective method to reduce the noise in pixel detectors based on Geiger mode avalanche photodiodes. A prototype with the sensor and the front-end electronics monolithically integrated has been fabricated with a conventional HV-CMOS process. Experimental results demonstrate the increase of the dynamic range of the sensor by applying this technique.