Hardness and structure characterization of Ti(6)Al(4)V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel

Ti(6)Al(4)V thin films were grown by magnetron sputtering on a conventional austenitic stainless steel. Five deposition conditions varying both the deposition chamber pressure and the plasma power were studied. Highly textured thin films were obtained, their crystallite size (C) 2008 Elsevier Ltd. All rights reserved.

Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

The impact of the titanium nitride (TIN) gate electrode thickness has been investigated in n and p channel SOI multiple gate field effect transistors (MuGFETs) through low frequency noise charge pumping and static measurements as well as capacitance-voltage curves The results suggest that a thicker TIN metal gate electrode gives rise to a higher EOT a lower mobility and a higher interface trap density The devices have also been studied for different back gate biases where the GIFBE onset occurs at lower front-gate voltage for thinner TIN metal gate thickness and at higher V(GF) In addition it is demonstrated that post deposition nitridation of the MOCVD HfSiO gate dielectric exhibits an unexpected trend with TIN gate electrode thickness where a continuous variation of EOT and an increase on the degradation of the interface quality are observed (C) 2010 Elsevier Ltd All rights reserved

An Array Recursive Least-Squares Algorithm With Generic Nonfading Regularization Matrix

We present a novel array RLS algorithm with forgetting factor that circumvents the problem of fading regularization, inherent to the standard exponentially-weighted RLS, by allowing for time-varying regularization matrices with generic structure. Simulations in finite precision show the algorithm`s superiority as compared to alternative algorithms in the context of adaptive beamforming.

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.

Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor

The present work reports the thermal annealing process, the number of layer and electrochemical process effect in the optical response quality of Bragg and microcavity devices that were applied as organic solvent sensors. These devices have been obtained by using porous silicon (PS) technology. The optical characterization of the Bragg reflector, before annealing, showed a broad photonic band-gap structure with blue shifted and narrowed after annealing process. The electrochemical process used to obtain the PS-based device imposes the limit in the number of layers because of the chemical dissolution effect. The interface roughness minimizations in the devices have been achieved by using the double electrochemical cell setup. The microcavity devices showed to have a good sensibility for organic solvent detection. The thermal annealed device showed better sensibility feature and this result was attributed to passivation of the surface devices. (c) 2007 Elsevier Ltd. All rights reserved.

Impact of SEG on uniaxially strained MuGFET performance

This work focuses on the impact of the source and drain Selective Epitaxial Growth (SEG) on the performance of uniaxially strained MuGFETs. With the channel length reduction, the normalized transconductance (gm.L./W) of unstressed MuGFETs decreases due to the series resistance and short channel effects (SCE), while the presence of uniaxial strain improves the gm. The competition between the series resistance (R(s)) and the uniaxial strain results in a normalized gm maximum point for a specific channel length. Since the SEG structure influences both R(s) and the strain in the channel, this work studies from room down to low temperature how these effects influence the performance of the triple-gate FETs. For lower temperatures, the strain-induced mobility enhancement increases and leads to a shift in the maximum point towards shorter channel lengths for devices without SEG. This shift is not observed for devices with SEG where the strain level is much lower. At 150 K the gm behavior of short channel strained devices with SEG is similar to the non SEC ones due to the better gm temperature enhancement for devices without SEG caused by the strain. For lower temperatures SEG structure is not useful anymore. (C) 2011 Elsevier Ltd. All rights reserved.

Optimized network structure for full-synchronization

A network of Kuramoto oscillators with different natural frequencies is optimized for enhanced synchronizability. All node inputs are normalized by the node connectivity and some important properties of the network Structure are determined in this case: (i) optimized networks present a strong anti-correlation between natural frequencies of adjacent nodes: (ii) this anti-correlation should be as high as possible since the average path length between nodes is maintained as small as in random networks: and (iii) high anti-correlation is obtained without any relation between nodes natural frequencies and the degree of connectivity. We also propose a network construction model with which it is shown that high anti-correlation and small average paths may be achieved by randomly rewiring a fraction of the links of a totally anti-correlated network, and that these networks present optimal synchronization properties. (C) 2008 Elsevier B.V. All rights reserved.

Jointly multi-user detection and channel estimation with genetic algorithm

This work aims at proposing the use of the evolutionary computation methodology in order to jointly solve the multiuser channel estimation (MuChE) and detection problems at its maximum-likelihood, both related to the direct sequence code division multiple access (DS/CDMA). The effectiveness of the proposed heuristic approach is proven by comparing performance and complexity merit figures with that obtained by traditional methods found in literature. Simulation results considering genetic algorithm (GA) applied to multipath, DS/CDMA and MuChE and multi-user detection (MuD) show that the proposed genetic algorithm multi-user channel estimation (GAMuChE) yields a normalized mean square error estimation (nMSE) inferior to 11%, under slowly varying multipath fading channels, large range of Doppler frequencies and medium system load, it exhibits lower complexity when compared to both maximum likelihood multi-user channel estimation (MLMuChE) and gradient descent method (GrdDsc). A near-optimum multi-user detector (MuD) based on the genetic algorithm (GAMuD), also proposed in this work, provides a significant reduction in the computational complexity when compared to the optimum multi-user detector (OMuD). In addition, the complexity of the GAMuChE and GAMuD algorithms were (jointly) analyzed in terms of number of operations necessary to reach the convergence, and compared to other jointly MuChE and MuD strategies. The joint GAMuChE-GAMuD scheme can be regarded as a promising alternative for implementing third-generation (3G) and fourth-generation (4G) wireless systems in the near future. Copyright (C) 2010 John Wiley & Sons, Ltd.

Structure and properties of an austenitic stainless steel AISI 316L grade ASTM F138 after low temperature plasma nitriding

Austenitic stainless steels cannot be conventionally nitrided at temperatures near 550 degrees C due to the intense precipitation of chromium nitrides in the diffusion zone. The precipitation of chro-mium nitrides increases the hardness but severely impairs corrosion resistance. Plasma nitriding allows introducing nitrogen in the steel at temperatures below 450 degrees C, forming pre-dominantly expanded austenite (gamma(N)), with a crystalline structure best represented by a special triclin-ic lattice, with a very high nitrogen atomic concentration promoting high compressive residual stresses at the surface, increasing substrate hardness from 4 GPa up to 14 GPa on the nitrided case.

Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SCI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. (C) 2009 Elsevier Ltd. All rights reserved.

Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC and standard SOI MOS devices considering the same mask dimensions. It is shown that by using CC devices, buffer gain very close to the theoretical limit can be achieved, with improved linearity, while for standard devices the gain departs from the theoretical value depending on the inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to confirm some hypotheses proposed to explain the gain behavior observed in the experimental data. By using numerical simulations the channel length has been varied, showing that the gain of buffers implemented with CC devices remains close to the theoretical limit even when short-channel devices are adopted. It has also been shown that the length of a source-follower buffer using CC devices can be reduced by a factor of 5, in comparison with a standard Sol MOSFET, without gain loss or linearity degradation. (C) 2008 Elsevier Ltd. All rights reserved.

Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation

In this work we present an analysis of harmonic distortion (HD) in graded-channel (GC) gate-all-a round (GAA) devices operating in saturation region for analog applications. The study has been performed through device characterization and two-dimensional process and device simulations. The overall study has been done on the total and third order HDs. When applied in the saturation regime as an amplifier, the GC outperforms conventional GAA transistors presenting simultaneously higher transconductance, lower drain output conductance and more than 15 dB improved linearity. The influence of channel length reduction on the H D is also analyzed. Although slight linearity degradation is observed in both the conventional and the GC devices when reducing the channel length, the HD presented by the GC transistor is significantly lower than the one showed by conventional device for any Studied channel length. This allows AC input signal amplitude up to 20 times higher than the conventional GAA for a same specified distortion level. (C) 2008 Elsevier Ltd. All rights reserved.

Genome structure of a Saccharomyces cerevisiae strain widely used in bioethanol production

Bioethanol is a biofuel produced mainly from the fermentation of carbohydrates derived from agricultural feedstocks by the yeast Saccharomyces cerevisiae. One of the most widely adopted strains is PE-2, a heterothallic diploid naturally adapted to the sugar cane fermentation process used in Brazil. Here we report the molecular genetic analysis of a PE-2 derived diploid (JAY270), and the complete genome sequence of a haploid derivative (JAY291). The JAY270 genome is highly heterozygous (similar to 2 SNPs/kb) and has several structural polymorphisms between homologous chromosomes. These chromosomal rearrangements are confined to the peripheral regions of the chromosomes, with breakpoints within repetitive DNA sequences. Despite its complex karyotype, this diploid, when sporulated, had a high frequency of viable spores. Hybrid diploids formed by outcrossing with the laboratory strain S288c also displayed good spore viability. Thus, the rearrangements that exist near the ends of chromosomes do not impair meiosis, as they do not span regions that contain essential genes. This observation is consistent with a model in which the peripheral regions of chromosomes represent plastic domains of the genome that are free to recombine ectopically and experiment with alternative structures. We also explored features of the JAY270 and JAY291 genomes that help explain their high adaptation to industrial environments, exhibiting desirable phenotypes such as high ethanol and cell mass production and high temperature and oxidative stress tolerance. The genomic manipulation of such strains could enable the creation of a new generation of industrial organisms, ideally suited for use as delivery vehicles for future bioenergy technologies.

Structure of a Population of Hydromedusa maximiliani (Testudines, Chelidae) from Parque Estadual da Serra do Mar, an Atlantic Rainforest Preserve in Southeastern Brazil

We studied the structure of a population of Hydromedusa maximiliani associated with a stream in Parque Estadual da Serra do Mar, Nucleo Itutinga-Piloes, southeastern Brazil, between October 2004 and October 2005. Twenty-five individuals were captured, and a population size of 43.72 +/- 23.7 individuals was estimated. This value is similar to that of the population of Parque Estadual Carlos Botelho, another Atlantic forest reserve of southeastern Brazil. Males were recaptured more frequently than females, suggesting higher activity and/or greater movement of males.

Spatial genetic structure of Hymenaea stigonocarpa Mart. ex Hayne assessed with chloroplast microsatellite markers

The use of chloroplast DNA markers (cpDNA) helps to elucidate questions related to ecology, evolution and genetic structure. The knowledge of inter-and intra-population genetic structure allows to design effective conservation and management strategies for tropical tree species. With the aim to help the conservation of Hymenaea stigonocarpa of the Cerrado (Brazilian savanna) in Sao Paulo State, an analysis of the spatial genetic structure (SGS) was conducted in two populations using five universal chloroplast microsatellite loci (cpSSR). The population of 68 trees of H. stigonocarpa in the Ecological Station of Itirapina (ESI) had a single haplotype, indicating a strong founder effect. In turn, the population of 47 trees of H. stigonocarpa in a contiguous area that includes the Ecological Station of Assis and the Assis State Forest (ESA), showed six haplotypes ((n) over cap (h) = 6) with a moderate haplotype diversity ((h) over cap = 0667 + 0094), revealing that it was founded by a small number of maternal lineages. The SGS analysis for the population ESA/ASF, using Moran`s I index, indicated limited seed dispersal. Considering SGS, for ex situ conservation strategies in the population ESA/ASF, seed harvesting should require a minimum distance of 750 m among seed-trees.