Optimisation of source/drain extension region profile for suppression of short channel effects in sub-50 nm DG SOI MOSFETs with high- k gate dielectrics

Novel technology dependent scaling parameters i.e. spacer to gradient ratio and effective channel length (Leff) are proposed for source/drain engineered DG MOSFET, and their significance in minimizing short channel effects (SCES) in high-k gate dielectrics is discussed in detail. Results show that a high-k dielectric should be associated with a higher spacer to gradient ratio to minimise SCEs The analytical model agrees with simulated data over the entire range of spacer widths, doping gradients, high-k gate dielectrics and effective channel lengths.

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Germanium (Ge) does not grow a suitable oxide for MOS devices. The Ge/dielectric interface is of prime importance to the operation of photo-detectors and scaled MOSTs. Therefore there is a requirement for deposited or bonded dielectric materials. MOS capacitors have been formed on germanium substrates with three different dielectric materials. Firstly, a thermally grown and bonded silicon dioxide (SiO2) layer, secondly, SiO2 deposited by atmospheric pressure CVD ‘silox’, and thirdly a hafnium oxide (HfO2) high-k dielectric deposited by atomic layer deposition (ALD). Ge wafers used were p-type 1 0 0 2 O cm. C–V measurements have been made on all three types of capacitors to assess the interface quality. ALD HfO2 and silox both display acceptable C–V characteristics. Threshold voltage and maximum and minimum capacitance values closely match expected values found through calculation. However, the bonded SiO2 has non-ideal C–V characteristics, revealing the presence of a high density of interface states. A H2/N2 post metal anneal has a detrimental effect on C–V characteristics of HfO2 and silox dielectrics, causing a shift in the threshold voltage and rise in the minimum capacitance value. In the case of hafnium dioxide, capacitor properties can be improved by performing a plasma nitridation of the Ge surface prior to dielectric deposition.

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/ cycle. Layer uniformity is approximately within ±1% of the mean value. MOS capacitors have been fabricated by evaporating aluminium electrodes. CV analysis has been used to determine the bulk and interface properties of the HfO 2, and their dependence on pre-clean schedule, deposition conditions and post-deposition annealing. The dielectric constant of the HfO 2 is typically 18. On silicon, best results are obtained when the HfO 2 is deposited on a chemically oxidised hydrophilic surface. On germanium, best results are obtained when the substrate is nitrided before HfO 2 deposition, using an in-situ nitrogen plasma treatment. © Springer Science+Business Media, LLC 2007.

Dielectrics in a time-dependent electric field: a real-time approach based on density-polarization functional theory

In the presence of a (time-dependent) macroscopic electric field the electron dynamics of dielectrics cannot be described by the time-dependent density only. We present a real-time formalism that has the density and the macroscopic polarization P as key quantities. We show that a simple local function of P already captures long-range correlation in linear and nonlinear optical response functions. Specifically, after detailing the numerical implementation, we examine the optical absorption, the second- and third-harmonic generation of bulk Si, GaAs, AlAs and CdTe at different level of approximation. We highlight links with ultranonlocal exchange-correlation functional approximations proposed within linear response time-dependent density functional theory framework.

Surface plasmons in layered structures with semiconductor and metallic films

The complete spectrum of eigenwaves including surface plasmon polaritons (SPP), dynamic (bulk) and complex waves in the layered structures containing semiconductor and metallic films has been explored. The effects of loss, geometry and the parameters of dielectric layers on the eigenmode spectrum and, particularly, on the SPP modes have been analysed using both the asymptotic and rigorous numerical solutions of the full-wave dispersion equation. The field and Poynting vector distributions have been examined to identify the modes and elucidate their properties. It has been shown that losses and dispersion of permittivity qualitatively alter the spectral content and the eigenwave properties. The SPP counter-directional power fluxes in the film and surrounding dielectrics have been attributed to vortices of power flow, which are responsible for the distinctive features of SPP modes. It has been demonstrated for the first time that the maximal attainable slow-wave factor of the SPP modes guided by thin Au films at optical frequencies is capped not by losses but the frequency dispersion of the actual Au permittivity. © 2009 EDP Sciences.

Millimeter-wave and submillimeter-wave imaging for security and surveillance

Passive equipments operating in the 30-300 GHZ (millimeter wave) band are compared to those in the 300 GHz-3 THz (submillimeter band). Equipments operating in the submillimeter band can measure distance and also spectral information and have been used to address new opportunities in security. Solid state spectral information is available in the submillimeter region making it possible to identify materials, whereas in millimeter region bulk optical properties determine the image contrast. The optical properties in the region from 30 GHz to 3 THz are discussed for some typical inorganic and organic solids. in the millimeter-wave region of the spectrum, obscurants such as poor weather, dust, and smoke can be penetrated and useful imagery generated for surveillance. in the 30 GHZ-3 THZ region dielectrics such as plastic and cloth are also transparent and the detection of contraband hidden under clothing is possible. A passive millimeter-wave imaging concept based on a folded Schmidt camera has been developed and applied to poor weather navigation and security. The optical design uses a rotating mirror and is folded using polarization techniques. The design is very well corrected over a wide field of view making it ideal for surveillance, and security. This produces a relatively compact imager which minimizes the receiver count.

Nonlinear scattering by anisotropic dielectric periodic structures

The combinatorial frequency generation by the periodic stacks of binary layers of anisotropic nonlinear dielectrics is examined. The products of nonlinear scattering are characterised in terms of the three-wave mixing processes. It is shown that the intensity of the scattered waves of combinatorial frequencies is strongly influenced by the constitutive and geometrical parameters of the anisotropic layers, and the frequency ratio and angles of incidence of pump waves. The enhanced efficiency of the frequency conversion at Wolf-Bragg resonances has been demonstrated for the lossless and lossy-layered structures. © 2012 O. V. Shramkova and A. G. Schuchinsky.

Resonantly loaded apertures for high-resolution near field surface imaging

A novel type of microwave probes based on the loaded aperture geometry has been proposed and experimentally evaluated for dielectrics characterisation and high-resolution near-field imaging. Experimental results demonstrate the possibility of very accurate microwave spectroscopic characterisation of thin lossy dielectric samples and biological materials containing water. High-resolution images of the subwavelength lossy dielectric strips and wet and dry leaves have been obtained with amplitude contrast around 10-20 dB and spatial resolution better than one-tenth of a wavelength in the near-field zone. A microwave imaging scenario for the early-stage skin cancer identification based on the artificial dielectric model has also been explored. This model study shows that the typical resolution of an artificial malignant tumour with a characteristic size of one-tenth of a wavelength can be discriminated with at least 6 dB amplitude and 50° phase contrast from the artificial healthy skin and with more than 3 dB contrast from a benign lesion of the same size. It has also been demonstrated that the proposed device can efficiently deliver microwave energy to very small, subwavelength, focal areas which is highly sought in the microwave hyperthermia applications.