Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics


Autoria(s): Armstrong, Mervyn; Gamble, Harold; McNeill, David; Ruddell, Frederick; Wadsworth, Haydn
Data(s)

01/05/2006

Identificador

http://pure.qub.ac.uk/portal/en/publications/germanium-mos-capacitors-with-hafnium-dioxide-and-silicon-dioxide-dielectrics(4cf25fe7-8a89-43eb-88b4-e5c565c6cb14).html

http://www.scopus.com/inward/record.url?scp=33845338480&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Armstrong , M , Gamble , H , McNeill , D , Ruddell , F & Wadsworth , H 2006 , ' Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics ' Paper presented at E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices) , Nice , France , 01/05/2006 - 01/05/2006 , pp. 0-0 .

Tipo

conferenceObject