Time-Resolved DRIFTS, MS, and Resistance Study of SnO2 Materials: The Role of Surface Hydroxyl Groups in Formation of Donor States

Time-resolved DRIFTS, MS, and resistance measurements were used to study the interaction of undoped and Pd-doped SnO2 with H-2 in air and argon at 300 degrees C. Using first-order kinetics, we compare the time constants for the resistance drop and its partial recovery with those of the surface hydroxyl evolution and water formation in the gas phase upon exposure to hydrogen. In the case of the undoped oxide, resistance and bridging hydroxyls (BOHs) evolve similarly, manifesting a fast main drop followed by recovery at a similar rate. The rate of water formation for this material was found to be much slower than that of the main drop in both the resistance and BOHs. In contrast, the resistance change for SnO2-Pd appeared to be similar to that of water formation, and no correlation was found between the evolution of resistance and surface OHs. Isotopic exchange on both materials revealed that water formation occurs via fast and slow hydrogen transfer to surface oxygen species. While the former originates from just-adsorbed hydrogen, the latter appears to proceed from the preadsorbed OHs. Both surfaces exhibit close interaction between chemisorbed oxygen and existing bridging OH groups, indicating that the latter is an intermediate in the hydrogen oxidation and generation of donor states on the surface.

Atmospheric pressure chemical vapour deposition of boron doped titanium dioxide for photocatalytic water reduction and oxidation

Boron-doped titanium dioxide (B-TiO) films were deposited by atmospheric pressure chemical vapour deposition of titanium(iv) chloride, ethyl acetate and tri-isopropyl borate on steel and fluorine-doped-tin oxide substrates at 500, 550 and 600 °C, respectively. The films were characterised using powder X-ray diffraction (PXRD), which showed anatase phase TiO at lower deposition temperatures (500 and 550 °C) and rutile at higher deposition temperatures (600 °C). X-ray photoelectron spectroscopy (XPS) showed a dopant level of 0.9 at% B in an O-substitutional position. The ability of the films to reduce water was tested in a sacrificial system using 365 nm UV light with an irradiance of 2 mW cm. Hydrogen production rates of B-TiO at 24 μL cm h far exceeded undoped TiO at 2.6 μL cm h. The B-TiO samples were also shown to be active for water oxidation in a sacrificial solution. Photocurrent density tests also revealed that B-doped samples performed better, with an earlier onset of photocurrent. © 2013 The Owner Societies.

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Germanium (Ge) does not grow a suitable oxide for MOS devices. The Ge/dielectric interface is of prime importance to the operation of photo-detectors and scaled MOSTs. Therefore there is a requirement for deposited or bonded dielectric materials. MOS capacitors have been formed on germanium substrates with three different dielectric materials. Firstly, a thermally grown and bonded silicon dioxide (SiO2) layer, secondly, SiO2 deposited by atmospheric pressure CVD ‘silox’, and thirdly a hafnium oxide (HfO2) high-k dielectric deposited by atomic layer deposition (ALD). Ge wafers used were p-type 1 0 0 2 O cm. C–V measurements have been made on all three types of capacitors to assess the interface quality. ALD HfO2 and silox both display acceptable C–V characteristics. Threshold voltage and maximum and minimum capacitance values closely match expected values found through calculation. However, the bonded SiO2 has non-ideal C–V characteristics, revealing the presence of a high density of interface states. A H2/N2 post metal anneal has a detrimental effect on C–V characteristics of HfO2 and silox dielectrics, causing a shift in the threshold voltage and rise in the minimum capacitance value. In the case of hafnium dioxide, capacitor properties can be improved by performing a plasma nitridation of the Ge surface prior to dielectric deposition.

Electroreduction of sulfur dioxide in some room-temperature ionic liquids

The mechanism of sulfur dioxide reduction at a platinum microelectrode was investigated by cyclic voltammetry in several room-temperature ionic liquids (RTILs)-[C(2)mim][NTf2], [C(4)mim][BF4], [C(4)mim][NO3], [C(4)mim][PF6], and [C(6)mim][Cl] where [C(2)mim] is 1-ethyl-3-methylimidazolium, [C(4)mim] is 1-butyl-3-methylimidazolium, [C(6)mim] is 1-hexyl-3-methylimidazolium, and [NTf2] is bis(trifluoromethylsufonyl)imide-with special attention paid to [C(4)mim][NO3] because of the well-defined voltammetry, high solubility, and relatively low diffusion coefficient of SO2 obtained in that ionic liquid. A cathodic peak is observed in all RTILs between -2.0 and -1.0 V versus a silver quasi-reference electrode. In [C(4)mim][NO3], the peak appears at -1.0 V, and potential step chronoamperometry was used to determine that SO2 has a very high solubility of 3100 (+/-450) mM and a diffusion coefficient of 5.0 (+/-0.8) x 10(-10) m(2) s(-1) in that ionic liquid. On the reverse wave, up to four anodic peaks are observed at ca. -0.4, -0.3, -0.2, and 0.2 V in [C(4)mim][NO3]. The cathodic wave is assigned to the reduction of SO2 to its radical anion, SO2-center dot. The peaks at -0.4 and -0.2 V are assigned to the oxidation of unsolvated and solvated SO2-center dot, respectively. The peak appearing at 0.2 V is assigned to the oxidation of either S2O42- or S2O4-center dot. The activation energy for the reduction of SO2 in [C(4)mim][NO3] was measured to be 10 (+/-2) kJ mol(-1) using chronoamperometric data at different temperatures. The stabilizing interaction of the solvent with the reduced species SO2-center dot leads to a different mechanism than that observed in conventional aprotic solvents. The high sensitivity of the system to SO2 also suggests that [C(4)mim][NO3] may be a viable solvent in gas sensing applications.

Kinetic analysis of the reaction between electrogenerated superoxide and carbon dioxide in the room temperature ionic liquids 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and hexyltriethylammonium bis(trifluoromethylsulfonyl)imide

The reduction of oxygen in the presence of carbon dioxide has been investigated by cyclic voltammetry at a gold microdisk electrode in the two room-temperature ionic liquids 1-ethyl-3-methylimidazolium bis-(trifluoromethylsulfonyl)imide ([EMIM][N(Tf)(2)]) and hexyltriethylammonium bis(trifluoromethylsulfonyl)imide ([N-6222] [N(Tf)(2)]). With increasing levels of CO2, cyclic voltammetry shows an increase in the reductive wave and diminishing of the oxidative wave, indicating that the generated superoxide readily reacts with carbon dioxide. The kinetics of this reaction are investigated in both ionic liquids. The reaction was found to proceed via a DISP1 type mechanism in [EMIM][N(Tf)(2)] with an overall second-order rate constant of 1.4 +/- 0.4 x 10(3) M-1 s(-1). An ECE or DISP1 mechanism was determined to be the most likely pathway for the reaction in [N-6222][N(Tf)(2)], with an overall second-order rate constant of 1.72 +/- 0.45 x 10(3) m(-1) s(-1).