Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad

Fabrication of Ti-Al coatings by mechanical alloying method

By means of the mechanical alloying (MA) method, Al and Ti + Al coatings were deposited on Ti alloy substrates. During the mechano-activation processing, the substrate surface was impacted by a large number of flying balls along with particles of powder. The repeated ball collisions with the substrate resulted in the deposition of powder on its surface. MA technique produced Ti + Al coating with a thickness of 200 µm and Al one with a thickness of 50 µm after 2 h milling at room temperature. The as-synthesized coatings showed structures with high apparent density and free of porosity. The surface morphology of the MA-coatings was very rough. Annealing treatment led to the leveling of this uneven morphology. Annealing at temperatures ranging between 600 °C and 1100 °C gave different aluminide phases on the samples. In the case of Al coating, Al3Ti and Ti3Al compound were observed upon heating up to 1100 °C. In the case of Ti + Al coating, Al3Ti, Al2Ti, TiAl and Ti3Al were formed on the surface.

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.

Plasma chloriding of thin-film silver - A novel process in silver-silver chloride reference electrode fabrication

Silver thin films were modified using a novel plasma modification process for the development of thin-film silver-silver chloride reference electrodes. The surface, physical, and electrochemical properties of these electrodes were investigated by atomic force microscopy, thickness and resistivity measurement techniques, as well as impedance spectroscopy and potentiometry. After plasma treatment, thin-film growth was observed and the electrodes, in general, exhibited low interface impedance and a roughened surface. Evidence of a complex surface reorganization was found. Correlating plasma conditions with film properties suggested that increasing pressure and exposure duration increased species availability, therefore governing the reaction rates, while input power appeared to influence the type of surface chemical reactions. Results also indicated that Ar/Cl-2 mixtures should be employed rather than pure chlorine plasmas. (C) 2002 The Electrochemical Society.

Chitosan nanoparticle as protein delivery carrier - Systematic examination of fabrication conditions for efficient loading and release

Chitosan nanoparticles fabricated via different preparation protocols have been in recent years widely studied as carriers for therapeutic proteins and genes with varying degree of effectiveness and drawbacks. This work seeks to further explore the polyionic coacervation fabrication process, and associated processing conditions under which protein encapsulation and subsequent release can be systematically and predictably manipulated so as to obtain desired effectiveness. BSA was used as a model protein which was encapsulated by either incorporation or incubation method, using the polyanion tripolyphosphate (TPP) as the coacervation crosslink agent to form chitosan-BSA-TPP nanoparticles. The BSA-loaded chitosan-TPP nanoparticles were characterized for particle size, morphology, zeta potential, BSA encapsulation efficiency, and subsequent release kinetics, which were found predominantly dependent on the factors of chitosan molecular weight, chitosan concentration, BSA loading concentration, and chitosan/TPP mass ratio. The BSA loaded nanoparticles prepared under varying conditions were in the size range of 200-580 nm, and exhibit a high positive zeta potential. Detailed sequential time frame TEM imaging of morphological change of the BSA loaded particles showed a swelling and particle degradation process. Initial burst released due to surface protein desorption and diffusion from sublayers did not relate directly to change of particle size and shape, which was eminently apparent only after 6 h. It is also notable that later stage particle degradation and disintegration did not yield a substantial follow-on release, as the remaining protein molecules, with adaptable 3-D conformation, could be tightly bound and entangled with the cationic chitosan chains. In general, this study demonstrated that the polyionic coacervation process for fabricating protein loaded chitosan nanoparticles offers simple preparation conditions and a clear processing window for manipulation of physiochemical properties of the nanoparticles (e.g., size and surface charge), which can be conditioned to exert control over protein encapsulation efficiency and subsequent release profile. The weakness of the chitosan nanoparticle system lies typically with difficulties in controlling initial burst effect in releasing large quantities of protein molecules. (C) 2007 Elsevier B.V. All rights reserved.