156 resultados para solid lasers

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The interaction of a circularly polarized laser pulse with a mixed solid target containing two species of ions is studied by particle in cell simulations and analytical model. After the interaction tends to be stable, it is demonstrated that the acceleration is more efficient for the heavier ions than that in plasmas containing a single kind of heavy ion and the acceleration efficiency is higher when its proportion is lower. To obtain monoenergetic heavy-ion beams, a sandwich target with a thin mixed ion layer between two light ion layers and a microstructured target are proposed. The influences of parameters of the laser pulse and target on ion acceleration are discussed in detail. It is found that, when the target is thick enough, a cold target is more appropriate for heavy-ion acceleration than a warm target, and the velocity of the reflected heavy ions is proportional to the laser amplitude.

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High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

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An analysis of the enhancement of light transmission through a sub-wavelength aperture by oil- or solid-immersion is presented in this letter. An output power enhancement phenomenon related to the oil-immersion or solid-immersion mechanism is realized experimentally and reported for a very small aperture laser, which is an agreement with simulation analysis. This phenomenon could be useful for future optical data storage, microscopy and lithography.

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The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.

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The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

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An analytical fluid model for vacuum heating during the oblique incidence by an ultrashort ultraintense p-polarized laser on a solid-density plasma is proposed. The steepening of an originally smooth electron density profile as the electrons are pushed inward by the laser is included self-consistently. It is shown that the electrons being pulled out and then returned to the plasma at the interface layer by the wave field can lead to a phenomenon like wave breaking since the front part of the returning electrons always move slower than the trailing part. This can lead to heating of the plasma at the expense of the wave energy. An estimate for the efficiency of laser energy absorption by the vacuum heating is given. It is also found that for the incident laser intensity parameter, a(L)> 0.5, the absorption rate peaks at an incident angle 45 degrees-52 degrees and it reaches a maximum of 30% at a(L)approximate to 1.5.

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In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported. It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

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Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

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We describe high-power planar waveguide laser which can achieve single-mode output from a multi-mode structure. The planar waveguide is constructed with incomplete self-imaging properties, by which the coupling loss of each guided mode can be discriminated. Thermal lens effects are evaluated for single-mode operation of such high-power diode-pumped solid-state lasers. (c) 2005 Elsevier B.V. All rights reserved.

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To optimize the performance of longitudinally pumped Yb^(3+):Y2O3 ceramic lasers, cavity parameters such as material length and output coupler transmission at a certain laser output power are calculated numerically using quasi-three-level laser model. The results show great potential of Yb^(3+):Y2O3 ceramics for highly efficient diode-pumped solid-state lasers.

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We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323 K (50 degrees C) for uncoated 20-mu m-wide and 2-mm-long devices. These devices display an output power of 36 mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10 mW per facet has been measured at 83 K.