Solid source MBE growth of quantum cascade lasers
| Data(s) |
2009
|
|---|---|
| Resumo |
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated. National Science Fund for Distinguished Young Scholars and other Research Projects of China 60525406 607360312006CB604903 2007AA03Z446 60806018 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu, FQ (Liu, Feng-Qi); Li, L (Li, Lu); Wang, LJ (Wang, Lijun); Liu, JQ (Liu, Junqi); Zhang, W (Zhang, Wei); Zhang, QD (Zhang, Quande); Liu, WF (Liu, Wanfeng); Lu, QY (Lu, Quanyong); Wang, ZG (Wang, Zhanguo) .Solid source MBE growth of quantum cascade lasers ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,NOV 2009 ,97(3):527-532 |
| Palavras-Chave | #半导体材料 #CONTINUOUS-WAVE OPERATION |
| Tipo |
期刊论文 |
