Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers


Autoria(s): Li CB; 冯东海; 贾天卿; Sun HY; Li XX; Xu SZ; Wang XF; 徐至展
Data(s)

2005

Resumo

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/680

http://www.irgrid.ac.cn/handle/1471x/9695

Idioma(s)

英语

Fonte

Li CB;冯东海;贾天卿;Sun HY;Li XX;Xu SZ;Wang XF;徐至展.,Solid State Commun.,2005,136(7):389-394

Palavras-Chave #ZnO thin film #laser processing #time-resolved optical measurement #electron energy loss rate
Tipo

期刊论文