GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy

The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.

The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.

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IEEE Electron Devices Soc.; IEEE Lasers & Electron Opt Soc.; IEEE Australia Chapter.; Lasers & Electron Opt Soc.; Australian Mat Res Soc.; Australian Inst Phys.; Philips Analyt.; Balzers Scitek Pty Ltd.; Heys Technologies Int Pty Ltd.; Oxford Instruments, Plasma Technol Grp.; Stanton Sci.; Thermo Optek (Australia) Pty Ltd.; Melbourne Convent & Marketing Bur.; La Trobe Univ, Ctr Mat & Surface Sci.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

IEEE Electron Devices Soc.; IEEE Lasers & Electron Opt Soc.; IEEE Australia Chapter.; Lasers & Electron Opt Soc.; Australian Mat Res Soc.; Australian Inst Phys.; Philips Analyt.; Balzers Scitek Pty Ltd.; Heys Technologies Int Pty Ltd.; Oxford Instruments, Plasma Technol Grp.; Stanton Sci.; Thermo Optek (Australia) Pty Ltd.; Melbourne Convent & Marketing Bur.; La Trobe Univ, Ctr Mat & Surface Sci.