Hydrogen-Bonding Recognition-Induced Color Change of Gold Nanoparticles for Visual Detection of Melamine in Raw Milk and Infant Formula

The color change induced by triple hydrogen-bonding recognition between melamine and a cyanuric acid derivative grafted on the surface of gold nanoparticles can be used for reliable detection of melamine. Since such a color change can be readily seen by the naked eye, the method enables on-site and real-time detection of melamine in raw milk and infant formula even at a concentration as low as 2.5 ppb without the aid of any advanced instruments.

Molecular Dynamics Modeling of Diffusion Bonding

Molecular dynamics simulations on diffusion bonding of Cu-Ag showed that the thickness of the interfacial region depended on the stress. The interfacial region became amorphous during diffusion bonding, and it would normally transform from amorphous into crystalline structure when the structure was cooled to the room temperature.

Fractal Pattern Formation In Anodic Bonding Of Pyrex Glass/Al/Si

Anodic bonding of Pyrex glass/Al/Si is an important bonding technique in micro/nanoelectromechanical systems (MEMS/NEMS) industry. The anodic bonding of Pyrex 7740 glass/Aluminum film/Silicon is completed at the temperature from 300 degrees C to 375 degrees C with a bonding voltage between 150 V and 450 V. The fractal patterns are formed in the intermediate Al thin film. This pattern has the fractal dimension of the typical two-dimensional diffusion-limited aggregation (2D DLA) process, and the fractal dimension is around 1.7. The fractal patterns consist of Al and Si crystalline grains, and their occurrences are due to the limited diffusion, aggregation, and crystallization of Si and Al atoms in the intermediate Al layers. The formation of the fractal pattern is helpful to enhance the bonding strength between the Pyrex 7740 glass and the aluminum thin film coated on the crystal silicon substrates.

Atomistic investigation of the effects of temperature and surface roughness on diffusion bonding between Cu and Al

Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

BONDING OF ALUMINA AND METAL USING BULK METALLIC GLASS FORMING ALLOY

Metal-alumina joints have found various practical applications in electronic devices and high technology industry. However, making of sound metal ceramic brazed couple is still a challenge in terms of its direct application in the industry. In this work we successfully braze copper with Al2O3 ceramic using Zr52.5Cu17.9Ni14.6Al10Ti5 bulk metallic glass forming alloy as filler alloy. The shear strength of the joints can reach 140 MPa, and the microstructrural analysis confirms a reliable chemical boning of the interface. The results show that the bulk metallic glass forming alloys with high concentration of active elements are prospective for using as filler alloy in metal-ceramic bonding.

Bonding Of Alumina And Metal Using Bulk Metallic Glass Forming Alloy

Metal-alumina joints have found various practical applications in electronic devices and high technology industry. However, making of sound metal ceramic brazed couple is still a challenge in terms of its direct application in the industry. In this work we successfully braze copper with Al2O3 ceramic using Zr52.5Cu17.9Ni14.6Al10Ti5 bulk metallic glass forming alloy as filler alloy. The shear strength of the joints can reach 140 MPa, and the microstructrural analysis confirms a reliable chemical boning of the interface. The results show that the bulk metallic glass forming alloys with high concentration of active elements are prospective for using as filler alloy in metal-ceramic bonding.

Bonding quality of Yb : Y3Al5O12/Y3Al5O12 composite crystals

The Yb:Y3Al5O12/Y3Al5O12 (Yb:YAG/YAG) composite crystals were prepared by thermal bonding method with different technological parameters. The bonding interface of the composite crystals were observed by optical microscope, scanning electron microscope, and atom force microscope. The light scattering experiments for bonding interface of the composite crystals were measured by the laser and transmission spectra. All experiments show that high-quality Yb:YAG/YAG composite crystals without space transition layer and light scattering on the bonding interface can be obtained by thermal bonding method under appropriate technological parameters.

EARLY MOTHER-INFANT RELATIONSHIPS OF MACACA-THIBETANA AT MT-EMEI CHINA

Quantitative data on early mother-infant relationships in the Tibetan macaque was collected during the first 23 weeks of infant life in spring, 1987, at Mt. Emei, China. During the first week of life, infants spent 98.3% of their time in ventroventral contact with their mothers. This contact rapidly decreased to 33.8% by the 4th week and thereafter to 0.85% by the 23rd week. Nipple contact decreased relatively slowly from 89.7% to 62.9% within the first 4 weeks of infant life and to 19.8% by the 23rd week. Ventrolateral and ventrodorsal contact appeared by the 2nd week, mean-while, maternal restraining behavior appeared, and reached a peak by the 3rd week. The mother neither encouraged nor discouraged her infant's independence during 4-8th weeks. Maternal rejection of the infant was first observed when the infant was 11 weeks old and continued thereafter.

Male-infant-male interactions in Tibetan macaques

Event-sampling and scans were used for collecting data on male-infant-male triadic interactions, and their effects on member spacing respectively in a group of Macaca thibetana at Mt. Emei in 1989. The group was partially provisioned by human visitors in seasons other than winter, and could be observed closely. In addition, a stable linear male-hierarchy among five males existed for two years since the end of 1987, providing a good social condition for this topic. The triadic interactions were specific to the birth season, and recognized as three types being on a continuum functionally changing from passive ''agonistic buffering'' (4.8%) to active spatial cohesion, which resulted in a significant decline of intermale distances. Positive correlations were documented between the triad initiation rate and the number of females in consort with the males in the mating season (MS), and between the triad reception rate and the number of infants in proximity to the males in the MS when maternal care was significantly reduced. Thus the male's mating effort and kin/sexual selection may deeply be involved in the triad of this species. Considering that the two triad-species, M. sylvanus and M. thibetana, had different levels of paternity, but shared similar foraging conditions, and showed similar intensities of male-infant caretaking, the triad was very likely a byproduct of male-infant caretaking, which was probably shaped to compensate heavy maternal investment to young offspring in harsh conditions. Accordingly, the long-term arguments about the triad in M. sylvanus can be united to a model of the way in which ''male-infant caretaking'' hypothesis works ultimately, and ''regulating social relations'' hypothesis does proximately.

Mechanical and chemical bonding properties of ground state BeH2

The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process

Surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. In this study, InP wafers are divided into four groups and treated by different chemical processes. Subsequently, the characteristics of the treated InP surfaces are carefully studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurements. The optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. This optimization is later evaluated by a scanning electronic microscope (SEM), and the ridge waveguide 1.55 mu m Si-based InP/InGaAsP multi-quantum-well laser chips are also fabricated. (c) 2005 Elsevier B.V. All rights reserved.

Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques

A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.