Heating, current drive and confinement regimes with the JET ICRH and lhcd systems

During its 1990 operation, 2 large RF systems were available on JET. The Ion Cyclotron Resonance Heating (ICRH) system was equipped with new beryllium screens and with feedback matching systems. Specific impurities generated by ICRH were reduced to negligible levels even in the most stringent H-mode conditions. A maximum power of 22 MW was coupled to L-mode plasmas. High quality H-modes (tau-E greater-than-or-equal-to 2.5 tau-EG) were achieved using dipole phasing. A new high confinement mode was discovered. It combines the properties of the H-mode regime to the low central diffusivities obtained by pellet injection. A value of n(d) tau-E T(i) = 7.8 x 10(20) m-3 s keV was obtained in this mode with T(e) approximately T(i) approximately 11 keV. In the L-mode regime, a regime, a record (140 kW) D-He-3 fusion power was generated with 10 - 14 MW of ICRH at the He-3 cyclotron frequency. Experiments were performed with the prototype launcher of the Lower Hybrid Current Drive (LHCD) systems with coupled power up to 1.6 MW with current drive efficiencies up to < n(e) > R I(CD)/P = 0.4 x 10(20) m-2 A/W. Fast electrons are driven by LHCD to tail temperatures of 100 keV with a hollow radial profile. Paradoxically, LHCD induces central heating particularly in combination with ICRH. Finally we present the first observations of the synergistic acceleration of fast electrons by Transit Time Magnetic Pumping (TTMP) (from ICRH) and Electron Landau Damping (ELD) (from LHCD). The synergism generates TTMP current drive even without phasing the ICRH antennae.

A simple method to simulate shrinkage-induced cracking in cement-based composites by lattice-type modeling

A new numerical procedure is proposed to investigate cracking behaviors induced by mismatch between the matrix phase and aggregates due to matrix shrinkage in cement-based composites. This kind of failure processes is simplified in this investigation as a purely spontaneous mechanical problem, therefore, one main difficulty during simulating the phenomenon lies that no explicit external load serves as the drive to propel development of this physical process. As a result, it is different from classical mechanical problems and seems hard to be solved by using directly the classical finite element method (FEM), a typical kind of "load -> medium -> response" procedures. As a solution, the actual mismatch deformation field is decomposed into two virtual fields, both of which can be obtained by the classical FEM. Then the actual response is obtained by adding together the two virtual displacement fields based on the principle of superposition. Then, critical elements are detected successively by the event-by-event technique. The micro-structure of composites is implemented by employing the generalized beam (GB) lattice model. Numerical examples are given to show the effectiveness of the method, and detailed discussions are conducted on influences of material properties.

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Seasonal Variations in Chlorophyll a Concentrations in Relation to Potentials of Sediment Phosphate Release by Different Mechanisms in a Large Chinese Shallow Eutrophic Lake (Lake Taihu)

The relationship between chlorophyll a and fractionation of sediment phosphorus, inorganic phosphate-solubilizing bacteria (IPB), and organic phosphate-mineralizing bacteria (OPB) was evaluated in a large Chinese shallow eutrophic lake (Lake Taihu) and its embayment (Wuli Bay). At the three study sites, the increase of chlorophyll a concentrations in April paralleled those of the iron bound phosphate accounting for major portion of sediment inorganic phosphate, and in June significantly higher OPB and IPB numbers (especially OPB) in sediment were main contributors to the peaks of chlorophyll a concentration. Even though IPB peaked from February to June, it should serve as an unimportant P source due to the irrelevancy with chlorophyll a and soluble reactive phosphorus (SRP). By contrast, at the other site in the embayment, the calcium-bound phosphate was predominant and solid, which was difficult to be released, and neither IPB nor OPB were detectable in the sediment, indicating weak potential for phosphorus release from the sediment, which was reflected in the small seasonal variation in SRP concentration in water column. Hence, the extents to which the three general mechanisms behind phosphate release from sediment (desorption of iron bound phosphate, solubilization by IPB and enzymatic hydrolysis by OPB) operated were different depending on seasons and sites in Lake Taihu, they may jointly drive phosphate release and accelerate the eutrophication processes.

Knock down of gfp and no tail expression in zebrafish embryo by in vivo-transcribed short hairpin RNA with T7 plasmid system

A short-hairpin RNA (shRNA) expression system, based on T7 RNA polymerase (T7RP) directed transcription machinery, has been developed and used to generate a knock down effect in zebrafish embryos by targeting green fluorescent protein (gfp) and no tail (ntl) mRNA. The vector pCMVT7R harboring T7RP driven by CMV promoter was introduced into zebrafish embryos and the germline transmitted transgenic individuals were screened out for subsequent RNAi application. The shRNA transcription vectors pT7shRNA were constructed and validated by in vivo transcription assay. When pT7shGFP vector was injected into the transgenic embryos stably expressing T7RP, gfp relative expression level showed a decrease of 68% by analysis of fluorescence real time RT-PCR. As a control, injection of chemical synthesized siRNA resulted in expression level of 40% lower than the control when the injection dose was as high as 2 mu g/mu l. More importantly, injection of pT7shNTL vector in zebrafish embryos expressing T7RP led to partial absence of endogenous ntl transcripts in 30% of the injected embryos when detected by whole mount in situ hybridization. Herein, the T7 transcription system could be used to drive the expression of shRNA in zebrafish embryos and result in gene knock down effect, suggesting a potential role for its application in RNAi studies in zebrafish embryos.

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.

Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD

A new metal catalysis-free method of fabricating Si or SiO2 nanowires (NWs) compatible with Si CMOS technology was proposed by annealing SiOx (x < 2) films deposited by plasma -enhanced chemical vapor deposition (PECVD). The effects of the Si content (x value) and thickness of SiOx films, the annealing process and flowing gas ambient on the NW growth were studied in detail. The results indicated that the SiOx film of a thickness below 300 rim with x value close to 1 was most favorable for NW growth upon annealing at 1000-1150 degrees C in the flowing gas mixture of N-2 and H-2. NWs of 50-100nm in diameter and tens of micrometers in length were synthesized by this method. The formation mechanism was likely to be related to a new type of oxide assisted growth (OAG) mechanism, with Si nanoclusters in SiOx films after phase separation serving as the nuclei for the growth of NWs in SiOx films > 200nm, and SiO molecules from thin SiO, film decomposition inducing the NW growth in films < 100nm. An effective preliminary method to control NW growth direction was also demonstrated by etching trenches in SiOx films followed by annealing.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions

Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.

Layer-by-layer assembly of carbon nanotubes and Prussian blue nanoparticles: A potential tool for biosensing devices

A promising method for assembling carbon nanotubes (CNTs) and poly(diallyldimethylammonium chloride) protected Prussian blue nanoparticles (P-PB) to form three-dimensional (3D) nanostructured films is proposed. The electrostatic interaction, combined with layer-by-layer self-assembly (LBL), between negatively charged CNTs and positively charged P-PB is strong enough to drive the formation of the 3D nanostructured films. Thus, prepared multilayer films were characterized by ultraviolet-visible-near-infrared spectroscopy (UV-vis-NIR), scanning electron microscopy (SEM) and cyclic voltammetry (CV).