Giant Goos-Hanchen displacement enhanced by dielectric film in frustrated total internal reflection configuration

It is predicted that the Goos-Hanchen displacement in the usual frustrated total internal reflection configuration can be resonantly enhanced greatly by coating a dielectric thin film onto the surface of the first prism when the angle of incidence is larger than the critical angle for total reflection at the prism-vacuum interface and is smaller than but close to the critical angle for total reflection at the prism-film interface. Theoretical analysis shows that the displacement of transmitted beam is about half the displacement of reflected beam in the thick limit of the vacuum gap between the two prisms. This is to be compared with the relation in the usual symmetric double-prism configuration that the displacement of transmitted beam is equal to the displacement of reflected beam. Numerical simulations for a Gaussian incident beam of waist width of 100 wavelengths reveal that when the dielectric thin film is of the order of wavelength in thickness, both the reflected and transmitted beams maintain well the shape of the incident beam in the thick limit of the vacuum gap. So largely enhanced displacements would lead to applications in optical devices and integrated optics. (c) 2007 American Institute of Physics.

Large positive and negative lateral displacements from total internal reflection configuration with a weakly absorbing dielectric film

It is theoretically shown that the simultaneously large positive and negative lateral displacements will appear when the resonant condition is satisfied for a TE-polarized light beam reflected from the total internal reflection configuration with a weakly absorbing dielectric film. Appearance of the enhanced negative lateral displacement is relative to the incidence angle, absorption of the thin Elm and its thickness. If we select an appropriate weakly absorbing dielectric film and its thickness, the simultaneously enhanced positive and negative lateral displacements will appear at different resonant angles. These phenomena may lead to convenient measurements and interesting applications in optical devices.

全电介质脉宽压缩光栅的研究进展

超短脉冲超高能量激光器作为研究光和物质相互作用以及惯性约束聚变的手段而得到了广泛的应用。综述了应用于啁啾脉冲放大(CPA)系统的脉冲压缩光栅(PCG)的发展概况；分析和评述了脉宽压缩光栅的设计原理和制作工艺，并给出了脉宽压缩光栅的发展展望。实践和理论证明采用多层膜介质衍射光栅是实现高性能脉宽压缩光栅的一种优良的设计方案。

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.

脉宽压缩光栅用的多层膜设计和性能分析

应用于啁啾脉冲放大技术中的脉宽压缩光栅是基于多层膜作为基底，利用全息干涉技术和离子束技术刻蚀而成。脉宽压缩光栅的衍射效率和抗激光损伤阈值一方面依赖于光栅结构的设计，另一方面很大程度上取决于作为基底的多层膜的设计。给出了以413．1nm作为写入波长，1053nm作为使用波长的多层介质光栅膜的设计．样品在ZZS-800F、型真空镀膜机上采用电子束蒸发方式沉积而成，并给出了膜系结构对光学性能影响因素的详细分析，结果表明膜系H3L(H2L)^9H0．5L2．03H满足光栅膜的指标。给出了样品光学特性测试，其使用波

Optimization of near-field optical field of multi-layer dielectric gratings for pulse compressor

Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO2 and SiO2, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge. (c) 2006 Elsevier B.V. All rights reserved.

用于钕玻璃啁啾脉冲放大系统光谱整形的多层介质膜反射镜

在千焦拍瓦高功率啁啾脉冲放大系统设计中,为了尽量消除增益窄化和增益饱和效应的影响,同时尽可能提高高功率激光输出脉冲信噪比参数,激光脉冲时空和光谱的整形问题备受关注.提出一种光谱整形新方法,利用特定结构的多层介质膜反射镜,可实现对大能量高功率啁啾脉冲钕玻璃放大系统中啁啾脉冲的光谱整形.研究结果表明,只要合理选择多层介质膜系的结构参数,可有效地控制其反射率分布,且在保证反射相位基本不变的条件下其调制度可超过60%.针对钕玻璃1053nm波长设计而成的光谱整形反射镜,反射带宽可达到196nm,色分辨率约为0.1nm,在几十纳米波长范围所对应的相位偏差小于12mrad,相当于λ/524,能够满足"神光Ⅱ"千焦拍瓦改造的技术指标要求.

High-efficiency reflective diffraction gratings in fused silica as (de)multiplexers at 1.55 mu m for dense wavelength division multiplexing application

We describe high-efficiency, high-dispersion reflection gratings fabricated in bulk fused Silica illuminated by incident lights in the C + L bands as (de)multiplexers for dense wavelength division multiplexing (DWDM) application. Based on the phenomenon of total internal reflection, gratings with optimized profile parameters exhibit diffraction efficiencies of more than 90% under TM- and TE-polarized incident lights for 101-nm spectral bandwidths (1520-1620 nm) and can reach an efficiency of greater than 97% for both polarizations at a wavelength of 1550 nm. Without loss of metal absorption, without coating of dielectric film layers, and independent of tooth shape, this new kind of grating should be of great interest for DWDM application. (C) 2005 Optical Society of America.

基于Berreman矩阵的双折射薄膜光谱响应特性计算

采用Berreman特征矩阵方法，通过数值计算研究了双折射薄膜的反射、透射等光谱响应特性。依据电磁场理论的电场分量、磁场分量的界面连续条件，推导了光波在各向异性双轴薄膜中的Berreman转移矩阵，用以分析含有各向异性介质层的复杂薄膜系统的光学性质。这些矩阵递推关系包含了界面处的多点反射，适用于一般的各向异性的多层膜系统，包括入射媒质或基底为各向异性的情况。在文中给出了各向同性入射媒质双轴各向异性膜层一各向同性基底薄膜系统的计算结果，验证了该计算方法的可行性，以此作为进一步研究各向异性薄膜和相关光学薄膜器

脉宽压缩光栅用多层膜制备和性能测试

给出了以413nm作为写入波长，1053nm作为使用波长的多层介质光栅膜的设计，计算表明膜系H3L（H2L）·9H0．5L2．03H满足光栅膜的要求．最后给出了制备得到的样品光学特性测试，结果表明在使用渡长和曝光波长处满足设计要求，其抗激光损伤阈值在光正入射和51．2°入射时分别为14．14J／cm^2和9．32J／cm^2，膜系的应力表现为压应力．

短脉冲激光辐照下熔融石英薄膜的损伤机理

激光诱导薄膜损伤过程中，雪崩离化（AI）和多光子离化（MPI）的性质和作用到目前仍然存在争议。基于STUART等人的电子密度演化方程，运用数值模拟方法，研究了脉宽为τ∈[0．01，5]ps范围内单脉冲激光作用下熔融石英薄膜中电子密度演化过程；讨论了初始电子密度、激光脉冲宽度对阈值功率密度和阈值能量的影响；分析了初始电子密度、激光脉冲宽度对多光子离化及雪崩离化的影响。研究结果表明，在所研究的脉宽范围内，对于熔融石英光学薄膜、飞秒激光诱导损伤以雪崩离化为主导，多光子离化的影响随着脉宽的降低而增强，雪崩离化所需种子电子主要来源于多光子离化。

低损耗193nm反射膜的设计

采用1/4规整膜系,从电场强度、吸收损耗及散射损耗的分布几个方面,对影响193 nm反射膜性能的因素进行了分析。以分析结果为基础,对低损耗193 nm反射膜的设计进行了探讨。结果表明:在空气侧的外膜层中电场强度较大,随着层数向内过渡,电场强度迅速减小;高折射率材料膜层的吸收损耗明显高于低折射率材料膜层的吸收损耗,而且靠近空气侧最外层的高折射率膜层的吸收损耗最大;按由外层向内层过渡的方向,吸收损耗迅速减小,减小的速度与高低折射率材料折射率的比值相关;表面散射损耗与两种材料的折射率比值成正比,但折射率比值减小后只能通过增加膜层数来获得一定的反射率,而这样又会使表面粗糙度增加,并且引入其它的损耗。因此,选择折射率差值适当大一些的材料对降低散射损耗是有利的。设计了27层膜堆的193 nm反射膜,设计反射率在98%以上。

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.

Combined transparent electrodes for high power GaN-based LEDs with long life time

In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.

Magnetic resonant cavity composing of a three layered plasmonic nanostructure

The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mu m is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the Q-value of this periodic cavity arrays. Q value is estimated about 18 and still has room for further improvement. It provides a new type of nanocavity that exhibits a strong magnetic response.