Spectra of identified high-p(T) pi(+/-) and p((p)over-bar ) in Cu + Cu collisions at root s(NN)=200 GeV

We report new results on identified (anti) proton and charged pion spectra at large transverse momenta (3 < p(T) < 10 GeV/c) from Cu + Cu collisions at root s(NN) = 200 GeV using the STAR detector at the Relativistic Heavy Ion Collider (RHIC). This study explores the system size dependence of two novel features observed at RHIC with heavy ions: the hadron suppression at high-p(T) and the anomalous baryon to meson enhancement at intermediate transverse momenta. Both phenomena could be attributed to the creation of a new form of QCD matter. The results presented here bridge the system size gap between the available pp and Au + Au data, and allow for a detailed exploration of the onset of the novel features. Comparative analysis of all available 200 GeV data indicates that the system size is a major factor determining both the magnitude of the hadron spectra suppression at large transverse momenta and the relative baryon to meson enhancement.

Study of facilitated potassium ion transfer across a water vertical bar 1,2-dichloroethane interface using different phase volume ratio systems

A study of potassium ion transfer across a water \ 1,2-dichloroethane (W \ DCE) interface facilitated by dibenzo-18-crown-6 (DB18C6) with various phase volume ratio systems is presented. The key point was that a droplet of aqueous solution containing a redox couple, Fe(CN)(6)(3-)/Fe(CN)(6)(4-), with equal molar ratio, was first attached to a platinum electrode surface, and the resulting droplet electrode was then immersed into the organic solution containing a hydrophobic electrolyte to construct a platinum electrode/aqueous phase/organic phase system. The interfacial potential of the W \ DCE within the series could be externally controlled because the specific compositions in the aqueous droplet make the Pt electrode function like a reference electrode as long as the concentration ratio of Fe(CN)(6)(3-)/Fe(CN)(6)(4-) remains constant. In this way, a conventional three-electrode potentiostat can be used to study the ion transfer process at a liquid \ liquid (L \ L) interface facilitated by an ionophore with variable phase volume ratio (r = V-o/V-w). The effect of r on ion transfer and facilitated ion transfer was studied in detail experimentally. We also demonstrated that as low as 5 x 10(-8) M DB18C6 could be determined using this method due to the effect of the high phase volume ratio.

Comparative studies of AOT and NaDEHP by fluorescence technique and z-potential (ζ) measurements

The aggregation behaviors of two surfactants with the same hydrophobic tail, sodium bis(2-ethylhexyl)sulfosuccinate (AOT) and sodium bis(2-ethylhexyl)phosphate (NaDEHP), have been investigated by the fluorescence technique and z-potential (ζ) measurements. Five fine peaks of the pyrene molecule fluorescence spectroscopy appear in the surfactant solution, and the micropolarity at which pyrene locates is monitored from the intensity ratio of the first (I1) and the third peak (I3). A wide peak around 475 nm, the emission spectra of the excimer of pyrene molecules, is observed in the NaDEHP solution, while this is not found for the AOT system. The value of I1/I3 decreases in a more limited concentration range for the AOT system than for NaDEHP, indicating that small aggregates can be more easily formed by NaDEHP molecules. The z-potential results for the aggregates formed by the two surfactants show that the interaction between AOT and PVP is stronger than that between NaDEHP and PVP.

Deformation behavior and microstructure effect in 2124Al/SiCp composite

tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify">Dynamic compression tests were performed by means of a Split Hopkinson Pressure Bar (SHPB). Test materials were 2124Al alloys reinforced with 17% volume fraction of 3, 13 and 37 μm SiC particles, respectively. Under strain rate ε = 2100 l/s, SiC particles have a strong effect on σ_{tyle="margin: 0px; padding: 0px; border: 0px; outline-style: none; font-size: 0.85em; font-family: Arial, Helvetica, sans-serif; line-height: 0; text-align: justify; color: #403838">0.2}tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify"> of the composites and the σ_{tyle="margin: 0px; padding: 0px; border: 0px; outline-style: none; font-size: 0.85em; font-family: Arial, Helvetica, sans-serif; line-height: 0; text-align: justify; color: #403838">0.2}tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify"> increases with different SiC particle size in the following order: 2124Al-alloy → 124Al/SiC_{tyle="margin: 0px; padding: 0px; border: 0px; outline-style: none; font-size: 0.85em; font-family: Arial, Helvetica, sans-serif; line-height: 0; text-align: justify; color: #403838">p}tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify"> (37 μm) → 2124Al/SiC_{tyle="margin: 0px; padding: 0px; border: 0px; outline-style: none; font-size: 0.85em; font-family: Arial, Helvetica, sans-serif; line-height: 0; text-align: justify; color: #403838">p}tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify"> (13 μm) → 2124Al/SiC_{tyle="margin: 0px; padding: 0px; border: 0px; outline-style: none; font-size: 0.85em; font-family: Arial, Helvetica, sans-serif; line-height: 0; text-align: justify; color: #403838">p}tyle="color: #403838; font-family: Arial, Helvetica, sans-serif; font-size: 13px; line-height: 19px; text-align: justify"> (3 μm), and the strain hardening of the composites depends mainly on the strain hardening of matrix, 2124A1 alloy. The results of dimensional analysis present that the flow stress of these composites not only depends on the property of reinforcement and matrix but also relates to the microstructure scale, matrix grain size, reinforcement size, the distance between reinforcements and dislocations in matrix. The normalized flow stress here is a function of inverse power of the edge-edge particle spacing, dislocation density and matrix grain size. Close-up observation shows that, in the composite containing SiC particles (3 μm), localized deformation formed readily comparing with other materials under the same loading condition. Microscopic observations indicate that different plastic flow patterns occur within the matrix due to the presence of hard particles with different sizes.

Synchronization of modified Chua's circuit with x vertical bar x vertical bar function

This paper considers the chaos synchronization of the modified Chua's circuit with x vertical bar x vertical bar function. We firstly show that a couple of the modified Chua systems with different parameters and initial conditions can be synchronized using active control when the values of parameters both in drive system and response system are known aforehand. Furthermore, based on Lyapunov stability theory we propose an adaptive active control approach to make the states of two identical Chua systems with unknown constant parameters asymptotically synchronized. Moreover the designed controller is independent of those unknown parameters. Numerical simulations are given to validate the proposed synchronization approach.

用数字化 M-Z 干涉仪对低密度混合流场测量的实验研究

本文提出了最近研制成功的数字化 M-Z 干涉系统,并用它对二维低密度混合流场的密度场进行了测量。由于该系统采用了激光光源以及干涉图的计算机处理技术,使得实验和数据处理的工作自动化,而且具有精度高的特点,适用于低密度混合流场中较弱信号的高精度测量。文中系统地分析了用激光作光源的条件下,M-Z 干涉系统对平行光扩束系统的要求,以及如何消除因激光干涉性太强而引起的寄生干涉条纹,通过对平行式半透半反镜的分析,给出了适用于 M-Z 干涉仪的平行式半透半反镜的具体设计参数,并简述了由于使用激光光源而简化仪器调节的原理,给出了一种使经典 M-Z 干涉仪与现代计算机技术相结合来提高测量精度的新方法。

国产电气石(z轴切割)压电性能的测量

<正> 一、前言电气石是一种斜角棱形压电晶体,z轴为它的电轴。它是一种天然晶体(目前已出现人造电气石晶体)。它的特点是:压电性能稳定;侧向灵敏度(指在x或y轴向加以单位载荷时在z平面上产生的电荷,即d_(31))小;机械强度高;对温度比较敏感,因而电气石作为流体静

A modified split hopkinson torsional bar in studying shear localization

A modified split Hopkinson torsional bar (SHTB) is introduced to eliminate the effect of the loading reverberation of the standard SHTB on the study of evolution of shear localization. The effect, the cause and the method by which to eliminate loading wave reverberation are carefully analysed and discussed. By means of the modified apparatus, the post-mortem observation of tested specimens can provide data on actual evolution of micro-structure and micro-damage during shear localization. Some test results of shear banding conducted with this apparatus support the use of the modified design. Moreover, the modification makes possible the correlation of evolving micro-structures to the transient shear stress-strain recording.

Elimination of loading reverberation in the split hopkinson torsional bar

The loading reverberation is a multiple wave effect on the specimen in the split Hopkinson torsional bar (SHTB). Its existence intensively destroys the microstructure pattern in the tested material and therefore, interferes with the study correlating the deformed microstructure to the macroscopic stress-strain response. This paper discusses the problem of the loading reverberation and its effects on the post-mortem observations in the SHTB experiment. The cause of the loading reverberation is illustrated by a stress wave analysis. The modification of the standard SHTB is introduced, which involves attaching two unloading bars at the two ends of the original main bar system and adopting a new loading head and a couple of specially designed clutches. The clutches are placed between the main bar system and the unloading bars in order to lead the secondary loading wave out of the main bar system and to cut off the connection in a timely manner. The loading head of the standard torsional bar was redesigned by using a tube-type loading device associated with a ratchet system to ensure the exclusion of the reflected wave. Thus, the secondary loading waves were wholly trapped in the two unloading bars. The wave recording results and the contrasting experiments for examining the post-mortem microstructure during shear banding both before and after the modification highly support the effectiveness of the modified version. The modified SHTB realizes a single wave pulse loading process and will become a useful tool for investigating the relation between the deformed microstructure and the macroscopic stress-strain response. It will play an important role especially in the study of the evolution of the microstructure during the shear banding process. (C) 1995 American Institute of Physics.

利用原子芯片上Z形磁阱囚禁中性^87Rb原子

利用解析和数值方法计算了Z形磁阱的囚禁势,发现当囚禁中心和芯片表面距离较远时（该距离和Z形线中部导线的一半长度相差不超过一个量级）,势阱的深度不能近似表示成偏置磁场By对应的能量,而要减去囚禁中心的势能高度;而增加By进行磁阱压缩到一定值时,势阱深度反而会下降.此外介绍了原子芯片的制作方法,以及利用原子芯片上Z形磁阱囚禁中性87Rb原子的实验装置和实验过程.最终有2×10^6个^87Rb原子被转移到Z形磁阱中.

Electric and magnetic losses and gains in determining the sign of refractive index

Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. n = root epsilon mu, in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as epsilon = epsilon(r) + i(epsilon i) and mu = mu(r) + i mu(i). The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability epsilon(i) > 0 and mu(i) > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability epsilon(i) < 0 and mu(i) < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters epsilon(r), mu(r), epsilon(i), and mu(i), in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re {Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously epsilon < 0 and mu < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for epsilon(r) < 0, mu(r) > 0, epsilon(i) > 0, and mu(i) > 0, the refractive index is negative n < 0 provided mu(i)/epsilon(i) > mu(r)/vertical bar epsilon(r)vertical bar. (c) 2006 Elsevier B.V. All rights reserved.

A Z-scan model for optical nonlinear nanometric films

The Z-scan technique is useful for measuring the nonlinear refractive index of thin films. In conventional Z-scan theories, two effects are often ignored, namely the losses due to the internal multi-interference and the nonlinear absorption inside the sample. Therefore, the theories are restricted to relatively thick films. For films thinner than about 100 nm, the two effects become significant, and thus cannot be ignored. In the present work, we present a Z-scan theory that takes both effects into account. The proposed model calculation is suitable for optical nonlinear films of nanometric thickness. With numerical simulations, we demonstrate dramatic deviations from the conventional Z-scan calculations.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.