利用原子芯片上Z形磁阱囚禁中性^87Rb原子

利用解析和数值方法计算了Z形磁阱的囚禁势,发现当囚禁中心和芯片表面距离较远时（该距离和Z形线中部导线的一半长度相差不超过一个量级）,势阱的深度不能近似表示成偏置磁场By对应的能量,而要减去囚禁中心的势能高度;而增加By进行磁阱压缩到一定值时,势阱深度反而会下降.此外介绍了原子芯片的制作方法,以及利用原子芯片上Z形磁阱囚禁中性87Rb原子的实验装置和实验过程.最终有2×10^6个^87Rb原子被转移到Z形磁阱中.

Trapping potential of a Z-trap is calculated with analytic and numeric methods. It's found that when a trappin. g center is a little bit far from the chip surface (the distance is about one order of the half length of the Z-wire central part), the trapping depth is not approximately eqsual to the potential B-y created by a bias magnetic field, the potential energy at the trapping center should be subtracted from the potential B-y created by the bias field. On the other hand, if an atom cloud is compressed to a certain extent by increasing B-y, the trapping depth will be decreased rather than increased. The preparation of the Z-trap in an atom chip, the experimental setup, and the experimental procedure for trapping neutral (87) Rb atoms is also introduced. At last we obtained 2 x 10(6) (87) Rb atoms trapped in the Z-trap.