Poly[di-mu(3)-chloro-mu(2)-trans-1,2-di-4-pyridylethylene-dicopper(I)]: a two-dimensional organic-inorganic hybrid constructed from linear CuCl clusters and bridging ligands

The structure of the title compound, [Cu2Cl2(C12H10N2)](n), contains infinite CuCl staircase-like chains, which lie about inversion centres. The trans-1,2-di-4-pyrid-ylethyl-ene mol-ecules also lie about inversion centres and connect the CuCl chains through Cu-N coordination bonds into a two-dimensional organic-inorganic hybrid network. The planar sheets are stacked along the c axis and associated through weak C-H center dot center dot center dot Cl inter-actions. The results show a reliable structural motif with controllable separation of the CuCl chains by variation of the length of the ligand.

An Analytical Solution for Three-Dimensional Diffraction of Plane P-Waves by a Hemispherical Alluvial Valley with Saturated Soil Deposits

An analytical solution for the three-dimensional scattering and diffraction of plane P-waves by a hemispherical alluvial valley with saturated soil deposits is developed by employing Fourier-Bessel series expansion technique. Unlike previous studies, in which the saturated soil deposits were simulated with the single-phase elastic theory, in this paper, they are simulated with Biot's dynamic theory for saturated porous media, and the half space is assumed as a single-phase elastic medium. The effects of the dimensionless frequency, the incidence angle of P-wave and the porosity of soil deposits on the surface displacement magnifications of the hemispherical alluvial valley are investigated. Numerical results show that the existence of a saturated hemispherical alluvial valley has much influence on the surface displacement magnifications. It is more reasonable to simulate soil deposits with Biot's dynamic theory when evaluating the displacement responses of a hemispherical alluvial valley with an incidence of P-waves.

Three-Dimensional Network Model And Its Parameter Calibration

A material model, whose framework is parallel spring-bundles oriented in 3-D space, is proposed. Based on a discussion of the discrete schemes and optimum discretization of the solid angles, a 3-D network cell consisted of one-dimensional components is developed with its geometrical and physical parameters calibrated. It is proved that the 3-D network model is able to exactly simulate materials with arbitrary Poisson ratio from 0 to 1/2, breaking through the limit that the previous models in the literature are only suitable for materials with Poisson ratio from 0 to 1/3. A simplified model is also proposed to realize high computation accuracy within low computation cost. Examples demonstrate that the 3-D network model has particular superiority in the simulation of short-fiber reinforced composites.

Evolution of three-dimensional coherent structures in compressible axisymmetric jet

A high order difference scheme is used to simulate the spatially developing compressible axisymmetric jet. The results show that the Kelvin-Helmholtz instability appears first when the jet loses its stability, and then with development of jet the increase in nonlinear effects leads to the secondary instability and the formation of the streamwise vortices. The evolution of the three-dimensional coherent structure is presented. The computed results verify that in axisymmetric jet the secondary instability and formation of the streamwise vortices are the important physical mechanism of enhancing the flow mixing and transition occurring.

Application of Three-Dimensional Discrete Element Face-to-Face Contact Model with Fissure Water Pressure to Stability Analysis of Landslide in Panluo Iron Mine

Three-dimensional discrete element face-to-face contact model with fissure water pressure is established in this paper and the model is used to simulate three-stage process of landslide under fissure water pressure in the opencast mine, according to the actual state of landslide in Panluo iron mine where landslide happened in 1990 and was fathered in 1999. The calculation results show that fissure water pressure on the sliding surface is the main reason causing landslide and the local soft interlayer weakens the stability of slope. If the discrete element method adopts the same assumption as the limit equilibrium method, the results of two methods are in good agreement; while if the assumption is not adopted in the discrete element method, the critical phi numerically calculated is less than the one calculated by use of the limit equilibrium method for the same C. Thus, from an engineering point of view, the result from the discrete element model simulation is safer and has more widely application since the discrete element model takes into account the effect of rock mass structures.

Two-dimensional simulation of inductive plasma sources with self-consistent power deposition

A time averaged two-dimensional fluid model including an electromagnetic module with self-consistent power deposition was developed to simulate the transport of a low pressure radio frequency inductively coupled plasma source. Comparsions with experiment and previous simulation results show, that the fluid model is feasible in a certain range of gas pressure. In addition, the effects of gas pressure and power input have been discussed.

Numerical experiments on one-dimensional model of turbulence

The initial-value problem of a forced Burgers equation is numerically solved by the Fourier expansion method. It is found that its solutions finally reach a steady state of 'laminar flow' which has no randomness and is stable to disturbances. Hence, strictly speaking, the so-called Burgers turbulence is not a turbulence. A new one-dimensional model is proposed to simulate the Navier-Stokes turbulence. A series of numerical experiments on this one-dimensional turbulence is made and is successful in obtaining Kolmogorov's (1941) k exp(-5/3) inertial-range spectrum. The (one-dimensional) Kolmogorov constant ranges from 0.5 to 0.65.

Two-Dimensional Hillslope Scale Soil Erosion Model

On a hillslope, overland flow first generates sheet erosion and then, with increasing flux, it causes rill erosion. Sheet erosion (interrill erosion) and rill erosion are commonly observed to coexist on hillslopes. Great differences exist between both the intensities and incidences of rill and interrill erosion. In this paper, a two-dimensional rill and interrill erosion model is developed to simulate the details of the soil erosion process on hillslopes. The hillslope is treated as a combination of a two-dimensional interrill area and a one-dimensional rill. The rill process, the interrill process, and the joint occurrence of rill and interrill areas are modeled, respectively. Thus, the process of sheet flow replenishing rill flow with water and sediment can be simulated in detail, which may possibly render more truthful results for rill erosion. The model was verified with two sets of data and the results seem good. Using this model, the characteristics of soil erosion on hillslopes are investigated. Study results indicate that (1) the proposed model is capable of describing the complex process of interrill and rill erosion on hillslopes; (2) the spatial distribution of erosion is simulated on a simplified two-dimensional hillslope, which shows that the distribution of interrill erosion may contribute to rill development; and (3) the quantity of soil eroded increases rapidly with the slope gradient, then declines, and a critical slope gradient exists, which is about 15-20 degrees for the accumulated erosion amount.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition

The effects of annealing on the optical properties of InAs/GaAs quantum dots (QDs) grown under different conditions by metalorganic chemical vapor deposition (MOCVD) are studied. A lower QD growth rate leads to an earlier and faster decrease of QD photoluminescence (PL) intensity with increasing annealing temperature. which is proposed to be related to the increased QD two-dimensional (2D)-three-dimensional (3D) transition critical layer thickness at low QD growth rate. High-quality GaAs cap layers grown at high temperature and a low deposition rate are shown to decrease the blueshift of the QDs' emission wavelength significantly during in-situ I h annealing experiments, which is important for the fabrication of long-wavelength InAs/GaAs QD lasers by MOCVD technique. (C) 2009 Elsevier B.V. All rights reserved.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

We have studied how the optical properties of InAs self-assembled quantum dots (QDs) grown on GaAs substrate are affected when depositing an InAlAs/InGaAs combination overgrowth layer directly on it by rapid thermal annealing (RTA). The photoluminescence measurement demonstrated that the InAs QDs experiences an abnormal variation during the course of RTA. The model of transformation of InAs-InAlAs-InGaAlAs could be used to well explain the phenomena. (C) 2003 Elsevier Science B.V. All rights reserved.

Influence of strain on annealing effects of In(Ga)As quantum dots

Post-growth rapid thermal annealing has been performed with In(Ga)As quantum dots (QDs) at different strain statuses. It is confirmed that the strain-enhanced interdiffusion decreases the inhomogeneous size distribution. The preferential lateral interdiffusion of QDs during annealing was observed. we attribute it to the naturally anisotropic strain distribution in/around the dots and the saturation of strain difference between the base boundary and the top of the dots. There exist strain-enhanced mechanism and vacancy diffusion enhanced mechanism during the annealing. As to which one dominates the QD interdiffusion depends on the thickness of capping layer and the annealing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2].

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.