Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition

The effects of annealing on the optical properties of InAs/GaAs quantum dots (QDs) grown under different conditions by metalorganic chemical vapor deposition (MOCVD) are studied. A lower QD growth rate leads to an earlier and faster decrease of QD photoluminescence (PL) intensity with increasing annealing temperature. which is proposed to be related to the increased QD two-dimensional (2D)-three-dimensional (3D) transition critical layer thickness at low QD growth rate. High-quality GaAs cap layers grown at high temperature and a low deposition rate are shown to decrease the blueshift of the QDs' emission wavelength significantly during in-situ I h annealing experiments, which is important for the fabrication of long-wavelength InAs/GaAs QD lasers by MOCVD technique. (C) 2009 Elsevier B.V. All rights reserved.

National Natural Science Foundation of China 60706009 90401025607360366077702160476009National Key Basic Research Program of China 2006CB604901 2006CB604902 National High Technology Research and Development Program of China 2006AA01Z256 2007AA03Z419 2007AA03Z417 This work was supported by the National Natural Science Foundation of China (Grant nos. 60706009, 90401025, 60736036, 60777021, 60476009), the National Key Basic Research Program of China (Grant nos. 2006CB604901, 2006CB604902) and the National High Technology Research and Development Program of China (Grant nos. 2006AA01Z256, 2007AA03Z419, 2007AA03Z417).