Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon
Data(s) |
1998
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Resumo |
Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2]. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gao M; Duan XF; Wang FL; Li JM .Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon ,APPLIED PHYSICS LETTERS,1998,72(20):2544-2546 |
Palavras-Chave | #半导体物理 #CAVITIES #DEFECTS #SI #AU #BUBBLES |
Tipo |
期刊论文 |