The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
| Data(s) |
2003
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| Resumo |
We have studied how the optical properties of InAs self-assembled quantum dots (QDs) grown on GaAs substrate are affected when depositing an InAlAs/InGaAs combination overgrowth layer directly on it by rapid thermal annealing (RTA). The photoluminescence measurement demonstrated that the InAs QDs experiences an abnormal variation during the course of RTA. The model of transformation of InAs-InAlAs-InGaAlAs could be used to well explain the phenomena. (C) 2003 Elsevier Science B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang ZY; Jin P; Li CM; Ye XL; Meng XQ; Xu B; Liu FQ; Wang ZG .The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing ,JOURNAL OF CRYSTAL GROWTH,2003,253 (1-4):59-63 |
| Palavras-Chave | #半导体材料 #low dimensional structures #nanostructures #quantum dots #molecular beam epitaxy #semiconducting III-V materials #laser diode #TIME-RESOLVED PHOTOLUMINESCENCE |
| Tipo |
期刊论文 |
