n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Zebu Cattle Are an Exclusive Legacy of the South Asia Neolithic

Animal domestication was a major step forward in human prehistory, contributing to the emergence of more complex societies. At the time of the Neolithic transition, zebu cattle (Bos indicus) were probably the most abundant and important domestic livestock species in Southern Asia. Although archaeological evidence points toward the domestication of zebu cattle within the Indian subcontinent, the exact geographic origins and phylogenetic history of zebu cattle remains uncertain. Here, we report evidence from 844 zebu mitochondrial DNA (mtDNA) sequences surveyed from 19 Asiatic countries comprising 8 regional groups, which identify 2 distinct mitochondrial haplogroups, termed I1 and I2. The marked increase in nucleotide diversity (P < 0.001) for both the I1 and I2 haplogroups within the northern part of the Indian subcontinent is consistent with an origin for all domestic zebu in this area. For haplogroup I1, genetic diversity was highest within the Indus Valley among the three hypothesized domestication centers (Indus Valley, Ganges, and South India). These data support the Indus Valley as the most likely center of origin for the I1 haplogroup and a primary center of zebu domestication. However, for the I2 haplogroup, a complex pattern of diversity is detected, preventing the unambiguous pinpointing of the exact place of origin for this zebu maternal lineage. Our findings are discussed with respect to the archaeological record for zebu domestication within the Indian subcontinent.

Spin Hall effect on the kagome lattice with Rashba spin-orbit interaction

We study the spin Hall effect in the kagome lattice with Rashba spin-orbit coupling. The conserved spin Hall conductance sigma(s)(xy) (see text) and its two components, i.e., the conventional term sigma(s0)(xy) and the spin-torque-dipole term sigma(s tau)(xy), are numerically calculated, which show a series of plateaus as a function of the electron Fermi energy epsilon(F). A consistent two-band analysis, as well as a Berry-phase interpretation, is also given. We show that these plateaus are a consequence of various Fermi-surface topologies when tuning epsilon(F). In particular, we predict that compared to the case with the Fermi surface encircling the Gamma point in the Brillouin zone, the amplitude of the spin Hall conductance with the Fermi surface encircling the K points is twice enhanced, which makes it highly meaningful in the future to systematically carry out studies of the K-valley spintronics.

Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

Seismic Responses of a Hemispherical Alluvial Valley to SV Waves: A Three-Dimensional Analytical Approximation

An analytical solution to the three-dimensional scattering and diffraction of plane SV-waves by a saturated hemispherical alluvial valley in elastic half-space is obtained by using Fourier-Bessel series expansion technique. The hemispherical alluvial valley with saturated soil deposits is simulated with Biot's dynamic theory for saturated porous media. The following conclusions based on numerical results can be drawn: (1) there are a significant differences in the seismic response simulation between the previous single-phase models and the present two-phase model; (2) the normalized displacements on the free surface of the alluvial valley depend mainly on the incident wave angles, the dimensionless frequency of the incident SV waves and the porosity of sediments; (3) with the increase of the incident angle, the displacement distributions become more complicated; and the displacements on the free surface of the alluvial valley increase as the porosity of sediments increases.

Effects of food and topography on ranging behavior of black crested gibbon (Nomascus concolor jingdongensis) in Wuliang mountain, Yunnan, China

We studied the ranging behavior of a habituated group of black crested gibbons (Nomascus concolor jingdongensis) in a high, seasonal habitat on Mt. Wuliang, central Yunnan, China, between March 2005 and April 2006. Our results indicated that the total home range size for the study group was 129 ha, or 151 ha if the lacunae within the borders in which gibbons were not observed were included. This is a much bigger range size than that of other gibbon species. However, 69.7% of their activities occurred within 29 ha. The intensity of quadrant use was significantly correlated with the distribution of important food patches. The mean yearly daily path length was 1,391 m. Gibbons traveled farther when they spent more time feeding on fruit. To avoid often passing through ridges with little food, gibbons usually stayed in the same valley for successive days, and then moved on to another valley for another several days, which resulted in a concentrated ranging pattern.

Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates

A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley, current ratio and the peak voltage are about 4.8 and 0.44 V, respectivcly The HEMT is characterized by a, gate length of 1 mu m, a, maximum transconductance of 125 mS/mm, and a threshold voltage of -1.0 V. The current-voltage, characteristics of the series-connected RTDs are presented. Tire current-voltage curves of the parallel connection of one RTD and one HEMT are also presented.

Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure

Photoluminescence of GaInP epilayers under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. The Gamma valleys of ordered GaInP epilayers rise slower than that of the disordered one. Considering the interactions between the Gamma valley and folded L and X valleys, the pressure dependence of the band gap of ordered GaInP is calculated and fitted. The results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

Potential Landscape and Flux Framework of Nonequilibrium Networks: Robustness, Dissipation, and Coherence of Biochemical Oscillations

We established a theoretical framework for studying nonequilibrium networks with two distinct natures essential for characterizing the global probabilistic dynamics: the underlying potential landscape and the corresponding curl flux. We applied the idea to a biochemical oscillation network and found that the underlying potential landscape for the oscillation limit cycle has a distinct closed ring valley (Mexican hat-like) shape when the fluctuations are small. This global landscape structure leads to attractions of the system to the ring valley.

大气湍流对斜程传输准单色高斯谢尔光束时间相干性的影响

由第一类零阶贝塞尔函数的级数展开推导出波结构函数在任意湍流条件下的近似表达式。由广义惠更斯菲涅耳原理、随高度变化的Hufnagel-Valley湍流廓线模型以及波结构函数在任意湍流条件下的近似表达式,导出了斜程传输时准单色高斯谢尔光束互相干函数的解析式。然后,利用表征光束时间相干性的纵向相干长度(可由互相干函数导出),研究了斜程传输时大气湍流对准单色高斯谢尔光束时间相干性的影响。研究结果表明,准单色高斯谢尔光束的时间相干性在整个斜程传输过程中保持不变。最后,对该结果在物理上给予了定性解释。

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths

This paper studies the dependence of I - V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunnelling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width.

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.