Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005
Data(s) |
2009
|
---|---|
Resumo |
Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang, WJ (Wang Wen-Jie); Deng, JJ (Deng Jia-Jun); Fu, XQ (Fu Xing-Qiu); Hu, B (Hu Bing); Ding, K (Ding Kun) .Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 ,CHINESE PHYSICS LETTERS,DEC 2009 ,26(12):Art.No.127101 |
Palavras-Chave | #半导体物理 #TEMPERATURE-DEPENDENCE |
Tipo |
期刊论文 |