Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-07T13:37:25Z No. of bitstreams: 1 Theoretical gain of strained GeSn0.02Ge1-x-y ' SixSny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-07T13:42:41Z (GMT) No. of bitstreams: 1 Theoretical gain of strained GeSn0.02Ge1-x-y ' SixSny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (MD5)

Made available in DSpace on 2010-05-07T13:42:42Z (GMT). No. of bitstreams: 1 Theoretical gain of strained GeSn0.02Ge1-x-y ' SixSny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (MD5) Previous issue date: 2010

国际