Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved.

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金

Crystal-growth in floating zone with phase-change and thermosolutal convections

Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.

Thermo-plastic instability in simple shear

A theoretical description of thermo-plastic instability in simple shear is presented in a system of equations describing plastic deformation, the first law of thermodynamics and Fourier's heat transfer rule. Both mechanical and thermodynamical parameters influence instability and it is shown that two different modes of instability may exist. One of them is dominated by thermal softening and has a characteristic time and length, connected to each other by thermal diffusion.A criterion combining thermal softening, current stress, density, specific heat, work-hardening, thermal conductivity and current strain rate is obtained and practical implications are discussed.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Statistical approach to bulk inclusion initialized damage in films

In experiments, we have found an abnormal relationship between probability of laser induced damage and number density of surface inclusion. From results of X-ray diffraction (XRD) and laser induced damage, we have drawn a conclusion that bulk inclusion plays a key role in damage process. Combining thermo-mechanical damage process and statistics of inclusion density distribution, we have deduced an equation which reflects the relationship between probability of laser induced damage, number density of inclusion, power density of laser pulse, and thickness of films. This model reveals that relationship between critical sizes of the dangerous inclusions (dangerous inclusions refer to the inclusions which can initialize film damage), embedded depth of inclusions, thermal diffusion length and tensile strength of films. This model develops the former work which is the statistics about surface inclusion. (c) 2006 Elsevier B.V. All rights reserved.

Effect of diffusion barrier on the high-temperature oxidation behavior of thermal barrier coatings

A selective oxidation technique has been applied to form a diffusion barrier on the Ni-based superalloy substrate by heating the substrate with electron beam of the electron beam-physical vapor deposition (EB-PVD) facility. The interdiffusion behavior, cross-sectional morphology, isothermal and cyclic oxidations were studied for thermal barrier coatings (TBCs) with and without diffusion barrier.

Diffusion mechanisms in the Fe3ASi

In this paper, the possible reasons for the high thermal vacancy concentration and the low migration barriers for the Fe atom diffusion in the DO3 structure Fe3Si have been discussed.

Comparison Of Shear Banding In Bmgs Due To Thermal-Softening And Free Volume Creation

This paper reports a comparative study of shear banding in BMGs resulting from thermal softening and free volume creation. Firstly, the effects of thermal softening and free volume creation on shear instability are discussed. It is known that thermal softening governs thermal shear banding, hence it is essentially energy related. However, compound free volume creation is the key factor to the other instability, though void-induced softening seems to be the counterpart of thermal softening. So, the driving force for shear instability owing to free volume creation is very different from the thermally assisted one. In particular, long wave perturbations are always unstable owing to compound free volume creation. Therefore, the shear instability resulting from coupled compound free volume creation and thermal softening may start more like that due to free volume creation. Also, the compound free volume creation implies a specific and intrinsic characteristic growth time of shear instability. Finally, the mature shear band width is governed by the corresponding diffusions (thermal or void diffusion) within the band. As a rough guide, the dimensionless numbers: Thermal softening related number B, Deborah number (denoting the relation of instability growth rate owing to compound free volume and loading time) and Lewis number (denoting the competition of different diffusions) show us their relative importance of thermal softening and free volume creation in shear banding. All these results are of particular significance in understanding the mechanism of shear banding in bulk metallic glasses (BMGs).

Surface-Bound Selectin-Ligand Binding Is Regulated By Carrier Diffusion

Two-dimensional (2D) kinetics of receptor-ligand interactions governs cell adhesion in many biological processes. While the dissociation kinetics of receptor-ligand bond is extensively investigated, the association kinetics has much less been quantified. Recently receptor-ligand interactions between two surfaces were investigated using a thermal fluctuation assay upon biomembrane force probe technique (Chen et al. in Biophys J 94:694-701, 2008). The regulating factors on association kinetics, however, are not well characterized. Here we developed an alternative thermal fluctuation assay using optical trap technique, which enables to visualize consecutive binding-unbinding transition and to quantify the impact of microbead diffusion on receptor-ligand binding. Three selectin constructs (sLs, sPs, and PLE) and their ligand P-selectin glycoprotein ligand 1 were used to conduct the measurements. It was indicated that bond formation was reduced by enhancing the diffusivity of selectin-coupled carrier, suggesting that carrier diffusion is crucial to determine receptor-ligand binding. It was also found that 2D forward rate predicted upon first-order kinetics was in the order of sPs > sLs > PLE and bond formation was history-dependent. These results further the understandings in regulating association kinetics of surface-bound receptor-ligand interactions.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 degrees C, but the drawing lines of InGaAsSb and InGaNAsSb take on an "M" shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 degrees C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region. (c) 2006 American Institute of Physics.

Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. Photoluminescence measurements on a series of samples with different well widths and N compositions were used to evaluate the effects. The intermixing of GaNAs and GaAs layers was clearly enhanced by the presence of a SiO2-cap layer. However, it was strongly dependent on the N composition. After annealing at 900 degreesC for 30 s, a blueshift up to 62 meV was observed for the SiO2-capped region of the sample with N composition of 1.5%, whereas only a small blueshift of 26 meV was exhibited for the bare region. For the sample with the N composition of 3.1%, nearly identical photoluminescence peak energy shift for both the SiO2-capped region and the bare region was observed. It is suggested that the enhanced intermixing is mainly dominated by SiO2-capped layer induced defects-assisted diffusion for the sample with smaller N composition, while with increasing N composition, the diffusion assisted by interior defects become predominant. (C) 2001 American Institute of Physics.