Ferromagnetism in Mn and Cr doped GaN by thermal diffusion


Autoria(s): Cai XM; Djurisic AB; Xie MH; Liu H; Zhang XX; Zhu JJ; Yang H
Data(s)

2005

Resumo

Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8830

http://www.irgrid.ac.cn/handle/1471x/63945

Idioma(s)

英语

Fonte

Cai, XM; Djurisic, AB; Xie, MH; Liu, H; Zhang, XX; Zhu, JJ; Yang, H .Ferromagnetism in Mn and Cr doped GaN by thermal diffusion ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,MAR 25 2005,117 (3):292-295

Palavras-Chave #光电子学 #GaN
Tipo

期刊论文