Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

DIFFERENTIAL GEOMETRICAL METHODS IN THE STUDY OF OPTICAL-TRANSMISSION (SCALAR THEORY) .2. TIME-DEPENDENT TRANSMISSION THEORY

By generalization of the methods presented in Part I of the study [J. Opt. Soc. Am. A 12, 600 (1994)] to the four-dimensional (4D) Riemannian manifold case, the time-dependent behavior of light transmitting in a medium is investigated theoretically by the geodesic equation and curvature in a 4D manifold. In addition, the field equation is restudied, and the 4D conserved current of the optical fluid and its conservation equation are derived and applied to deduce the time-dependent general refractive index. On this basis the forces acting on the fluid are dynamically analyzed and the self-consistency analysis is given.

成就目标与心理健康的关系及相关因素的作用

The relationship between achievement goal and mental health, and the effect of the related factors Abstract Recently, adolescent’s mental health and depression problem have been widely concerned all over the world. Studies concerning it have been done from different perspectives. High school is the key period of adolescent’s physical and mental development, when they may have a high risk of mental conflicts, certain behavioral and emotional problems. Through questionnaire with high school students as subjects, this study examines achievement goal, self-concept, social comparison and the relationship between these factors and mental health. This study consists of three parts: 1) a preliminary exploration of the relationship between vocational school students’ achievement goal, self-concept and their mental health; 2) a revision of the simplified Chinese version for Dykman’ s goal Orientation Inventory; 3) a further discussion on the relationship between high school students’ achievement goal, self-concept, social comparison and depression. Major findings of this study are: 1. Dykman’s Goal Orientation Inventory is revised. This revised version, with high validity and reliability, conforms to Dykman’s theoretical assumptions and can be a convenient and effective measurement for achievement goal. 2. Self-concept and achievement goal of vocational school students can make a significant prediction of their mental health. Learning goal influences mental health through self-concept. 3. Achievement goal, self-concept and social comparison of high school students are closely related to their depression. 4. Self-concept and social comparison of high school students are the mediator variable between achievement goal and depression. The theoretical and practical implications of this study: 1. With the simplified Chinese version of Dykman’s Goal Orientation Inventory revised and used first in this study, its applicability is inspected and the conclusion drawn by Dykman on the prediction of achievement goal on depression is examined as well; on the basis of previous studies, a comprehensive and systematic study is done on how the factors work together to influence mental health(particularly depression). 2. This study enrichs the studies with high school students as subjects. It provides methods and basis for the theoretical studies and interference about high school students’ mental health education and depression problem.

工科大学生心理应激、应对与自我概念的关系研究

In the period of college, an individual matures rapidly in all aspects. College engineering students are the important parts of undergraduates. The state of an individual’s mental health may affect and even decide his future life and work. The level of the student’s self-concept and the kind of coping styles the students adopt are directly related to their mental health. So, it is significant to study the psychological stress, coping and self-concept of college engineering students for the mental health education and research of college engineering students. Based on overviews of former research, with the China College Student Psychological Stress Scale, the Coping Styles Scale and the Tennessee Self-Concept Scale, 559 college engineering students were investigated to explore the characteristics of and the relationship between the psychological stress, coping styles and self-concept of college engineering students. The results showed: 1. The stresses of learning, living and daily hassles were the main psychological stresses of college engineering students. There were significant differences in psychological stress between students from the countryside and those from urban areas, between needy students and non-needy students, between single-parent students and non-single-parent students, among students from different grades, with different academic achievements and of different postgraduate targets, between student party members and non-party members, between student cadres and non-cadres. However, there were no significant differences between male and female, between those from single-child families and from multiple-child families. 2. The coping styles of solving problem, seeking help and rationalization were the main coping styles of college engineering students. There were significant differences in the coping styles between needy students and non-needy students, among students from different grades, with different academic achievements and of different postgraduate targets, between student party members and non-party members, between student cadres and non-cadres. However, there were no significant differences between students from the countryside and from urban areas, between male and female, between single-parent students and non-single-parent students, between those from single-child families and from multiple-child families. 3. The self-concept of college engineering students was positive in general. There were significant differences in self-concept between students from the countryside and those from urban areas, between male and female, between needy students and non-needy students, between single-parent students and non-single-parent students, among students from different grades, with different academic achievements and of different postgraduate targets, between student party members and non-party members, between student cadres and non-cadres. However, there were no significant differences between those from single-child families and from multiple-child families. 4. The psychological stress had significantly negative correlation to the immature coping styles, and had partial correlation to the mature coping styles. Coping style has significant predictability on psychological stress. 5. The positive factors of the self-concept had significantly negative correlation to psychological stress, but self-criticism had positive correlation to psychological stress. There are significant differences between high self-concept students and low self-concept students for psychological stress. Self-concept has significant predictability on psychological stress. 6. The positive factors of the self-concept had significantly negative correlation to the coping styles of self-blame, illusion, avoidance, and rationalization, but had significantly positive correlation to the coping style of solving problem and seeking help. Self-criticism had significantly negative correlation to the coping styles of self-blame, illusion, avoidance, and rationalization. There are significant differences between high self-concept students and low self-concept students for coping styles. Self-concept has significant predictability on coping styles. 7. The self-concept of college engineering students had an effect on psychological stress by coping styles. However, the effect by the immature coping styles was higher than that to the mental health directly, and the effect by the mature and mixed coping styles was slighter than that to the mental health directly. According to the results, improving the college engineering students’ self-concept level and establishing right self-concept, developing the middle school student’ active coping styles and overcoming the negative coping styles are essential and important to the college engineering students’ mental health and provide useful clues for the psychological education of the college engineering students.

Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD

In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal Organic Chemical Vapor Deposition) and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.

Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Improvements in the selectivity of electrochemical detectors for liquid chromatography and flow injection analysis using the self-assembled n-alkanethiol monolayer-modified au electrode

4-Aminophenol (4-AP), paracetamol (PRCT), norepinephrine (NE), and dopamine (DA) (all somewhat hydrophobic compounds) were HPLC electrochemically detected while the signals from uric acid (UA) and ascorbic acid (AA) (both hydrophilic compounds at the pH studied) were minimized, taking advantage of the permselectivity of the self-assembled n-alkanethiol monolayer (C-10-SAM)-modified Au electrodes based on solute polarity, The effects of various factors, such as the chain length of the n-alkanethiol modifier, modifying time, and pH value, on the permeability of C-10-SAM coatings were examined, The calibration curves, linear response ranges, detection limits, and reproducibilities of the EC detector for 4-AP, PRCT, NE, and DA were obtained, The result shows that the EC detector can be applied in the chromatographic detection of 4-AP, PRCT, NE, and DA in urine, effectively removing the influence of UA and AA in high concentrations existing in biological samples. As a result, a great improvement in the selectivity of EC detectors has been achieved by using Au electrodes coated with neutral n-alkanethiol monolayer.