Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved.

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

We have investigated the growth of AlGaN epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( LT) AlN buffer thicknesses. Combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of AlGaN films in a microscopic scale. It is found that the suitable thickness of the LT AlN buffer for high quality AlGaN growth is around 20 nm. The Al compositional inhomogeneity of the AlGaN epilayer is attributed to the low lateral mobility of Al adatoms on the growing surface.

Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser

A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

To fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-Al-composition AlGaN (Al content > 50%) films with reduced dislocation densities must be developed. This paper describes the growth of high-Al-composition AlGaN film on (0001) sapphire via a LT AIN nucleation layer by low pressure metalorganic chemical vapor deposition (LPMOCVD). The influence of the low temperature AIN buffer layer thickness on the high-Al-content AlGaN epilayer is investigated by triple-axis X-ray diffraction (TAXRD), scanning electron microscopy (SEM), and optical transmittance. The results show that the buffer thickness is a key parameter that affects the quality of the AlGaN epilayer. An appropriate thickness results in the best structural properties and surface morphology. (c) 2006 Elsevier B.V. All rights reserved.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 mu J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. (C) 2005 Elsevier B.V. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained. (c) 2005 Elsevier GmbH. All rights reserved.

Terahertz pulse generation with LT-GaAs photoconductive antenna

Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.

LT���的性能分析与研究

LT���(Luby Transform Codes)属于数字喷泉码,是一类新型前向纠错编码算法,适用于基于包通信的删除信道环境。本文概述了LT���的编译码原理及实现方法,对LT���的理想孤子度分布算法和鲁棒孤子度分布算法进行了仿真验证,分析了LT���在包删除信道下的性能,讨论了实际应用中的参数优化规则,研究结果对提高实时纠删应用的性能具有重要的实用价值。

Control of vortex shedding at moderate Reynolds numbers

The suppression method of vortex shedding from a circular cylinder has been studied experimentally in the Reynolds number range from 300 to 1600. The test is performed in a water channel. The model cylinder is 1 cm in diameter and 38 cm in length. A row of small rods of 0.18 cm in diameter and 1.5 cm in length are perpendicularly connected to the surface of the model cylinder and distributed along the meridian, The distance between the neighboring rods and the angle of attack of the rods can be changed so that the suppression effect on vortex shedding can be adjusted. The results show that vortex shedding can be suppressed effectively if the distance between the neighboring rods is smaller than 3 times and the cylinder diameter and the angle of attack is in the range of 30degreesless than or equal tobeta<90°.

Microcracks Propagation in One Al/SiCp under Impact Loading

Numerous microcracks propagation in one metal matrix composite, Al/SiCp under impact loading was investigated. The test data was got with a specially designed impact experimental approach. The analysis to the density, nucleating locations and distributions of the microcracks as well as microstructure effects of the original composite was received particular emphasis. The types of microcracks or debonding nucleated in the tested composite were dependent on the stress level and its duration. Distributions of the microcracks were depended on that of microstructures of the tested composite while total number of microcracks in unit area and unit duration, was controlled by the stress levels. Also, why the velocity was much lower than theoretical estimations for elastic solids and why the microcracks propagating velocities increased with the stress levels' increasing in current experiments were analysed and explained.

Squeeze-film Effects in MEMS Devices with Perforated Plates for Small Amplitude Vibration

Squeeze-film effects of perforated plates for small amplitude vibration are analyzed through modified Reynolds equation (MRE). The analytical analysis reckons in most important influential factors: compressibility of the air, border effects, and the resistance caused by vertical air flow passing through perforated holes. It is found that consideration of air compressibility is necessary for high operating frequency and small ratio of the plate width to the attenuation length. The analytical results presented in this paper agree with ANSYS simulation results better than that under the air incompressibility assumption. The analytical analysis can be used to estimate the squeeze-film effects causing damping and stiffness added to the system. Since the value of Reynolds number involved in this paper is low (< 1), inertial effects are neglected.

Fractal dimensions for unsaturated porous media

The analytical expressions of the fractal dimensions for wetting and non-wetting phases for unsaturated porous media are derived and are found to be a function of porosity, maximum and minimum pore sizes as well as saturation. There is no empirical constant in the proposed fractal dimensions. It is also found that the fractal dimensions increase with porosity of a medium and are meaningful only in a certain range of saturation S-w, i.e. S-w > S-min for wetting phase and S-w < S-max for non-wetting phase at a given porosity, based on real porous media for requirements from both fractal theory and experimental observations. The present analysis of the fractal dimensions is verified to be consistent with the existing experimental observations and it makes possible to analyze the transport properties such as permeability, thermal dispersion in unsaturated porous media by fractal theory and technique.

电子束引起的热击波和层裂破坏效应(英文)

本文对强流低能相对论电子束引起LT���12铝产生的热击波和层裂进行了分析．电子束在靶材中的能量沉积是非常复杂的，通常都用Monte－Carlo数值模拟的方法来计算能量沉积，本文发展了一种新的半经验解析方法．在研究由电子束引起材料的动态响应时，对于靶材表面的熔化过程要进行适当考虑，本文使用了GRAY三相状态方程，详细考虑了这种复杂的溶化过程．同时在研究层裂破坏效应及应力波的衰减规律时，放弃了通常的von—Mises流体弹塑性模型，而使用了应变率相关的本构模型．计算结果和实验结果比较一致．