Terahertz pulse generation with LT-GaAs photoconductive antenna
| Data(s) |
2006
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| Resumo |
Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy. Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:07Z (GMT). No. of bitstreams: 1 2254.pdf: 1044082 bytes, checksum: d5aacb8b0875b76e93187f3791a558b8 (MD5) Previous issue date: 2006 Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect. Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Zhao, GZ (Zhao, G. Z.) .Terahertz pulse generation with LT-GaAs photoconductive antenna .见：IEEE .Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,143-143 |
| Palavras-Chave | #半导体材料 #TEMPERATURE-GROWN GAAS #CARRIER DYNAMICS #EMISSION |
| Tipo |
会议论文 |
