High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber
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2009
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Resumo |
The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved. China Postdoctoral Science Foundation 20070420997 This work was supported by China Postdoctoral Science Foundation funded Project (20070420997). |
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Idioma(s) |
英语 |
Fonte |
Pan SD ; Zhao LN ; Yuan Y ; Zhu SN ; He JL ; Wang YG .High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber ,OPTICAL MATERIALS,2009 ,31(8):1215-1217 |
Palavras-Chave | #半导体材料 #Semiconductor saturable absorber #Q-switch #Mode lock #Nd:GdVO4 |
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期刊论文 |