Effects of testosterone undecanoate as a male contraceptive candidate on rat immunological features

Testosterone undecanoate (TU) is under phase III clinical trial as a hormonal male contraceptive in China. Sex hormones can modulate the immune system. Female hormonal contraceptives may affect SIV/HIV-1 transmission. To evaluate the safety of TU and to understand whether long-term use of TU for a male contraceptive affects users' immunological features, adult male rats were treated for a 32-week TU-treated phase at the dose of 20 mg TU/kg body weight and a 24-week recovery phase. The reproductive and immunological parameters of 4-6 rats in each subgroup were examined at the stated time point. The mean sperm count and viability in the treated rats were significantly suppressed (p < 0.01). In the TU-treated group: the mean blood leukocyte and lymphocyte counts; the proliferation indexes of T cells from peripheral blood mononuclear cells (PBMC) and spleen; and, of B cells from spleen, as well as the mean counts of blood T, NK, and B cells decreased in comparison with those of control group. These decreases were not significant (p > 0.01). Similarly, the mean serum IgM, IgG, and IgA levels and complement activity in TU-treated rats were lower than those in control group (p > 0.01), and the changes in the antibody levels of the examined genital secretions were not significant (p > 0.01). The changes in the thickness of urethra epithelium, and in secretory component (SC) expression in genitals were not observed in the treated group. These results demonstrated that long-term supraphysiological TU injection did not obviously affect the examined rat immunological parameters.

The separation of Cerium(IV) from nitric acid solutions containing Thorium(IV) and Lanthanides(III) using pure [C(8)mim]PF6 as extracting phase

The extraction behavior of Ce(IV) along with Th(IV) and Ln(III) (Ln = Ce, Gd, Yb) nitrate by pure ionic liquid, [C(8)mim]PF6, was investigated. [C(8)mim]PF6 alone showed good extraction ability for Ce(IV), while it was slight for Th(IV) and negligible for Ln(III). The extraction behavior of Ce(IV) by [C(8)mim]PF6 was particularly studied, and the most probable extraction mechanism proposed was the anion exchange mechanism. Moreover, the stripping of Ce(IV) from IL phase was also investigated. The Ce(IV) in IL phase can be quantitatively recovered by water.

The phase transitions of hetero atoms substituted molecular sieves Me-VPI-5(Me=Mg, Ti, Sn, Si) and their influence on spectra structures of Eu(III) ion

The hetero atom substituted aluminophosphate molecular sieves Me-VPI-5(Me = Mgt Ti, Sn, Si) were synthesized hydrothermally. Rare earth ions are originally doped into these microporous materials by aqueous solution ion exchange procedures. The phase transitions of the microporous materials are investigated by high-temperature and high-pressure experimental techniques. The influence of the phase transitions on the rare earth ions' spectral structures is discussed, With the increase of temperature, Eu(II)Mg-VPI-5 is converted into Eu(II)Mg-AIPO(4)-8, then into tridymite phase. The pressure has a notable influence on Eu(II) ion's spectral structures. The spectral structures have changed regularly with the increase of pressure.

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

A further discussion on basic equations for two-phase flow: On collision stress of solid phase

The following points are argued: (i) there are two independent kinds of interaction on interfaces, i.e. the interaction between phases and the collision interaction, and the jump relations on interfaces can accordingly be resolved; (ii) the stress in a particle can also be divided into background stress and collision stress corresponding to the two kinds of interaction on interfaces respectively; (iii) the collision stress, in fact, has no jump on interface, so the averaged value of its derivative is equal to the derivative of its averaged value; (iv) the stress of solid phase in the basic equations for two\|phase flow should include the collision stress, while the stress in the expression of the inter\|phase force contains the background one only. Based on the arguments, the strict method for deriving the equations for two\|phase flow developed by Drew, Ishii et al. is generalized to the dense two\|phase flow, which involves the effect of collision stress.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si

The tribological behaviors and phase transformation of single crystal silicon against Si3N4, Ruby and steel were investigated in this study. It was found that the strong chemical action between silicon and Fe was the key factor to the tribological behavior of silicon as slid against steel. SEM and Raman spectroscopy indicated that phase transformation of single crystal silicon occurred during the running-in period at low sliding velocity as slid against Si3N4 and Ruby. and gave birth to single or a mixture phase of Si-III, Si-XII and amorphous silicon. The high hardness of counterpart and the absence of chemical action between silicon and counterpart facilitated the phase transformation of single crystal silicon. (C) 2008 Elsevier Ltd. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.