GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE
| Data(s) |
1992
|
|---|---|
| Resumo |
GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LU DC; LIU XL; WANG D; LIN LY.GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE,JOURNAL OF CRYSTAL GROWTH ,1992,124(0):383-388 |
| Palavras-Chave | #半导体材料 #GALLIUM ANTIMONIDE #OMVPE #GAAS1-XSBX #MOCVD |
| Tipo |
期刊论文 |
